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Image of ROHM 4th Generation SiC MOSFETs - Conduction Loss

This is another example of power converters taking advantage of the improved switching performance. While the ON-state resistance of 3rd and 4th Generation SiC MOSFETs are comparable, the 4th Generation device features smaller chip size and significantly lower capacitance values, enabling faster switching speed and reduced losses. This benefit is especially remarkable as the switching frequency increases. In this experiment, a reduction of switching energy by over 60% for the buck converter operation has contributed to drastically lower cooling requirement for the components, and an opportunity to downsize the heat sink.

PTM Published on: 2022-06-09