ROHM’s 4^th Generation MOSFETs not only offer efficient performance but they are also easier to drive. The recommended turn-on gate voltage is flexible between 15 V and 18 V, making it compatible with other power devices such as silicon IGBTs. When 15 V gate bias is used for the conduction state instead of 18 V, the MOSFET shows a small increase in ON-resistance by 7%. This is much more manageable than the 30% difference in ON-resistance for the previous Generation device. In a converter-level test, it is confirmed that driving the 4^th Generation SiC MOSFET at 15 V gate bias does not significantly impact its overall power conversion efficiency, although 18 V gate voltage still has an advantage to reduce the conduction losses to a very minimum.