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A key advantage of the latest SiC MOSFET is the efficient switching performance. This benchmark experiment compares ROHM’s device against three competitor parts in a series of double-pulse switching tests. When the recommended gate resistance is used as a baseline and the switching speed is further controlled for equivalent drain-to-source peak voltages, ROHM’s 4th Generation SiC MOSFET exhibits lower switching loss and better efficiency.
PTM Published on: 2022-06-09
France