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Image of ROHM 4th Generation SiC MOSFETs - Conduction Loss

In this application example, a buck converter is tested for power conversion efficiency using both 3rd and 4th Generation SiC MOSFET devices with a similar chip size. Because of its much lower ON-state resistance, the 4th Generation MOSFET performs significantly better in the entire range of output power. The thermal images compare the two SiC MOSFETs operating at 5 kW output power level, demonstrating substantially less heat generation in the newer MOSFET due to its conduction loss improvement.

PTM Published on: 2022-06-09