The 4^th Generation SiC MOSFETs offers opportunities to boost power conversion efficiency by prioritizing conduction loss reduction, switching loss reduction, or a combination of both. For lower switching frequency applications, by replacing previous generation SiC devices with new parts of similar chip size and lower ON-state resistance, the conduction loss can be significantly reduced in a cost-effective manner. In other use cases where switching performance is more critical, an effective design approach is to adopt a device with similar ON-state resistance but much lower gate capacitances. The 4^th Generation SiC features substantially reduced gate-to-drain capacitance by chip design, and along with a smaller chip size, the MOSFET can reach much faster switching speed with lower energy losses.