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Image of ROHM 4th Generation SiC MOSFETs - Specs

ROHM’s 4th Generation SiC MOSFETs are available in 750 V and 1,200 V classes, with a range of ON-state resistance ratings. These discrete devices are offered in through-hole packages of TO247-3L and TO247-4L. The latter package supports Kelvin source connections for enhanced switching performance. The 4th Generation products feature low ON-state resistance, low power losses, user-friendly gate drive design and high ruggedness against short-circuit events.

PTM Published on: 2022-06-09