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      |  | COMPUTER |  Key Components for Stationary Computing
  
  
    
      |   CAPACITORS  TR3Molded Case SMD Tantalum Chip Capacitor Features
        Low ESR100 % surge current tested (C, D, and E case sizes)Molded case available in seven case codesTerminations: 100 % matte tin, standard tin/lead available  TR3
 |   RESISTORS, NON-LINEAR  NTCS0603E3Glass-Protected SMD 0603 NTC Thermistor Features
        Tolerance on R25 down to 1 %, and on B25/85 down to 1 %High operating temperature up to 150 °C  NTCS0603E3
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      |   MOSFETs  SiRA10DP/SiRA00DPSingle, 30 V N-Channel Power MOSFETs Features
          Highly efficient TrenchFET® Gen IV technology for increased power densityThermally enhanced PowerPAK® SO-8 packagingMaximum on-resistance down to 0.001 ΩTypical gate charge down to 34 nC at VGS = 10 V  SiRA10DP  SiRA00DP
 |   OPTOELECTRONICS  VLMx13000603 LED Indicator Features
          Super red, soft orange, yellow, yellowgreen, true-green, and blueExceptionally bright in a ChipLED packageViewing angle of 130°1.6 mm x 0.8 mm x 0.8 mm height  VLMS1300, VLMO1300, VLMY1300, VLMG1300, VLMTG1300, VLMB1300, VLMB1310
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      |   MOSFETs  SiHP22N60E/SiHG47N60ESingle, 600 V N-Channel Power MOSFETs Features
          High performance E Series high-voltage Super Junction technologyMaximum current up to 47 ATO-220 and TO-247 packagingMaximum on-resistance down to 0.064 Ω atVGS = 10 V  SiHP22N60E  SiHG47N60E
 |   OPTOELECTRONICS  TCZT8020 - Door or Blade SensorMatched Emitter/Detector Pair Features
          Typical output current under test: IC = 0.5 mA with gap width of 4 mmTransmissive or reflective sensor with 2-pin through hole componentsVariable gap width; based on applicationAngle of half intensity: ± 25°  TCZT8020
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      |   ICs  SiC78050 A, 16 V DrMOS Integrated Power Stage Features
          93 % peak efficiencyHigh switching frequency up to 1 MHzCompliant with Intel DrMOS 4.0 specificationsPackaged in a 40 lead QFN,6 mm x 6 mm x 0.75 mm
  SiC780
 |   DIODES  SMCJxx1500 W SMC TRANSZORB® TVS VWM = 5 V ∼ 188 V Features
          1500 W peak pulse power capability at10/1000 µs waveformVery fast response timeLow profile SMC packageExcellent clamping capability  SMCJ5.0A thru SMCJ188CA  SMCJ5.0A thru SMCJ188CA (Halogen-Free)
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      |   INDUCTORS  IHLP-2525CZLow-Profile, High-Current IHLP® Inductor Features
          Shielded constructionHandles high transient current spikes without saturationUltra-low buzz noise due to composite construction100 % lead (Pb)-free and RoHS-compliant  IHLP-2525CZ-01  IHLP-2525CZ-06  IHLP-2525CZ-07 
  IHLP-2525CZ-11  IHLP-2525CZ-51  IHLP-2525CZ-1A 
  IHLP-2525CZ-5A  IHLP-2525CZ-A1
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      |   CAPACITORS  293DSMD Tantalum Molded Chip Capacitor Features
        Tantamount®, standard industrial gradeMolded case available in six case codesTerminations: 100 % matte tin, standard, tin/lead availableCompatible with high volume automatic pick and place equipmen  293D
 |   RESISTORS  WSL2512SMD, Power Metal Strip® Resistor Features
        1 W current sensing resistor in 2512 package sizeFeatures a very low 0.5 mΩ to 500 mΩ resistance value rangeStandard tolerance of 1.0 % with 0.5 % availableHigh-temperature performance up to + 170 °C  WSL2512
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      |   MOSFETs  Si7431DPSingle, - 200 V P-Channel Power MOSFET Features
          200 V p-channel technologyThermally enhanced PowerPAK® SO-8 packagingMaximum on-resistance down to 0.174 Ω  Si7431DP
 |   MOSFETs  IRF820Single, 500 V N-Channel Power MOSFET Features
          Maximum current of 2.5 ATO-220 packagingMaximum on-resistance of 3 Ω at VGS = 10 VTypical gate charge of 16 nC at VGS = 10 V  IRF820
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      |   DIODES  SMBJxx600 W SMB TRANSZORB® TVS VWM = 5 V ∼ 188 V Features
          Low profile SMB package600 W peak pulse power capability with 10/1000 µs waveformExcellent clamping capabilityVery fast response time  SMBJ5.0A thru SMBJ188A  SMBJ5.0A thru SMBJ188A (Halogen-Free)
 |   ICs  SiC401Scalable 10 A to 15 A, 30 V, Buck Regulator Features
          Ultrafast transient responseSupports all ceramic capacitor solution with no external ESR requirementFull protection set of OTP, SCP, UVP, OVPCompact 32 lead QFN 5 mm x 5 mm package  SiC401
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      |   RESISTORS, NON-LINEAR  NTCS0402E3Glass-Protected SMD 0402 NTC Thermistor Features
          Tolerance on R25 down to 1 %, and on B25/85 down to 1 %High operating temperature up to 150 °C  NTCS0402E3.....T
 |   INDUCTORS  IHLP-2525CZLow-Profile, High-Current IHLP® Inductor Features
          Shielded constructionHandles high transient current spikes without saturationUltra-low buzz noise due to composite construction100 % lead (Pb)-free and RoHS-compliant  IHLP-2525CZ-01  IHLP-2525CZ-06  IHLP-2525CZ-07 
  IHLP-2525CZ-11  IHLP-2525CZ-51  IHLP-2525CZ-1A 
  IHLP-2525CZ-5A  IHLP-2525CZ-A1
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      |   CAPACITORS  VJ.....W1BC SeriesSMD Multilayer Ceramic Chip Capacitors and Arrays (Including 0603) Features
          Available from 0201 to 1210 body sizesC0G (NP0), X5R, X7R, Y5V, high Q and ultra high Q/low ESR dielectricChip array size 0612 with 4 capacitors insideBuilt with dry sheet technology process and 100 % tin termination, fully RoHS-compliant  VJ....W1BC Basic Commodity Series 
  VJ....W1BC High Q Dielectric 
  VJ....W1BC MLCC Chip Array 
  VJ....W1BC Ultra High Q/Low ESR 
  VJ....W1BC Ultra Small Series 0201
 |   RESISTORS  M/D55342Military Thick Film/Thin Film Chip Resistors Features
          Qualified to, and comply with, existing MIL-PRF-55342 specificationsEstablished reliability with verified failure rates (M, P, R, U, S, V, and T [space] levels)Offered in all 13 MIL case sizes, and in resistance values from 1 Ω to 22 MΩFulfill a need in designs and applications that require higher reliability resistors  E/H (Military M/D55342) - Thin Film Resistors 
  E/H (T-Level) (Military M/D55342) - Thin Film Resistors 
  E/H (Ta2N) (Military M/D55342) - Thin Film Resistors 
  RCWPM (Military M/D55342) - Thick Film Chip Resistors
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      |   CAPACITORS  MAL2 102Power High-Ripple Current Screw Terminal Features
        Long useful life: up to 15 000 h at 85 °C and 400 000 h at 40 °CAvailable in voltages 200 V to 450 V; capacitance values from 220 µF to 33 000 µFSizes up to 90 mm x 220 mm; standard and high-current terminals  MAL2 102
 |   RESISTORS  WSL1206SMD, Power Metal Strip® Resistor Features
        0.25 W current sensing resistor in 1206 package sizeFeatures a very low 1.0 mΩ to 200 mΩ resistance value rangeStandard tolerance of 1.0 % with 0.5 % availableHigh-temperature performance up to + 170 °C  WSL  WSL...18 High Power
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      |   CAPACITORS  MKP1848 DC-LinkAutomotive Grade MKP DC-Link Capacitor Features
          High CV product (1 µF to 400 µF; 450 V to 1200 V), with operating temperature up to 105 °CLong life (100 000 h at UNDC and 70 °C)High ripple current capabilities: up to 54 AAEC-Q200 qualified, automotive grade  MKP1848 DC-Link
 |   RESISTORS  MCS0402/MCT0603/MCU0805/MCA1206Thin Film Chip Resistors Features
          CECC approved according to EN 140401-801Available from 1R to 10MLow TCR down to ± 10 ppm/K, tight tolerance down to 0.1 %High-pulse load robustness  MCS0402, MCT0603, MCU0805, MCA1206 - Professional 
  MCS0402, MCT0603, MCU0805, MCA1206 - Precision
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      |   OPTOELECTRONICS  VO31202.5 A Output Current Optoisolated IGBT/MOSFET Gate Driver Features
          2.5 A peak driver current5300 V isolation voltage25 kV/µs CMR110 °C operating temperature  VO3120
 |   DIDOES  BZT03CGlass-Passivated Junction Zener Diode Features
          Hermetically sealed packageClamping time in picosecondsRoHS-compliantHalogen-free  BZT03C
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      |   MOSFETs  SiHG47N60E/SiHW47N60ESingle, 600 V N-Channel Power MOSFETs Features
          High-performance E Series high-voltage Super Junction technologyMaximum current of 47 ATO-247 packagingMaximum on-resistance of 0.064 Ω at VGS = 10 V  SiHG47N60E  SiHW47N60E
 |   RECTIFIERS  VS-40TPS08PBF40 A High-Voltage Phase Control Thyristor Features
          Designed and qualified according to JEDEC-JESD47Low IGT parts availableRoHS-compliant125 °C maximum operating junction temperature  VS-40TPS08PBF
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      |   CAPACITORS  293DSMD Tantalum Molded Chip Capacitor Features
        Tantamount®, standard industrial gradeMolded case available in six case codesTerminations: 100 % matte tin, standard, tin/lead availableCompatible with high volume automatic pick and place equipment        293D
 |   RESISTORS  WSL1206SMD, Power Metal Strip® Resistor Features
        0.25 W current sensing resistor in 1206 package sizeFeatures a very low 1.0 mΩ to 200 mΩ resistance value rangeStandard tolerance of 1.0 % with 0.5 % availableHigh-temperature performance up to + 170 °C  WSL  WSL...18 High Power
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      |   INDUCTORS  IHLP-4040DZLow-Profile, High-Current IHLP® Inductor Features
          Shielded constructionHandles high transient current spikes without saturationUltra-low buzz noise due to composite construction100 % lead (Pb)-free and RoHS-compliant  IHLP-4040DZ-01  IHLP-4040DZ-11  IHLP-4040DZ-1A 
  IHLP-4040DZ-51  IHLP-4040DZ-5A  IHLP-4040DZ-A1
 |   RESISTORS  TNPW e3 SeriesHigh Stability Thin Film Chip Resistors Features
          Low temperature coefficient and tight tolerances: ± 0.1 %, ± 10 ppm/KExcellent overall stability at harsh environmental conditionsAEC-Q200 qualified, automotive gradeCase sizes: 0402 to 1210  TNPW e3
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      |   DIODES  SM6T600 W Surface-Mount TVS in TO-214AA Features
          Low-profile packageGlass passivated chip junction600 W peak pulse power capability with a 10/1000 µs waveformAvailable in unidirectional and bidirectional versions  SM6T Series  SM6T Series (Halogen-Free)
 |   DIODES  BAS21Silicon Epitaxial Single Diode Features
          AEC-Q101 qualifiedSOT-23 packageGreen version availableReverse voltage 250 V  BAS19-V, BAS20-V, BAS21-V 
  BAS19-V-G, BAS20-V-G, BAS21-V-G
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      |   OPTOELECTRONICS  VO615APhototransistor Output, High Temperature Features
          DIP-4 and SMD-4 packageHigh ambient temperature of 110 °CIsolation voltage 5000 VRMS  VO615A
 |   ICs  DG2706High-Speed, Quad SPDT Analog Switch Features
          Low crosstalk of - 70 dBHigh off-isolation of - 90 dBGuaranteed on-resistance of 3 Ω at 3.15 VLow-voltage logic threshold  DG2706
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      |   MOSFETs  Si7164DPSingle 60 V N-Channel Power MOSFET Features
          Thermally enhanced PowerPAK® SO-8 packagingMaximum on-resistance down to 0.00625 ΩTypical gate charge of 49.5 nC at VGS = 10 V  Si7164DP
 |   MOSFETs  Si1965DHDual 12 V P-Channel Power MOSFET Features
          SC-70 packagingMaximum on-resistance down to 0.0390 ΩTypical gate charge of 1.7 nC at VGS = 4.5 V  Si1965DH
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