EPC9013: 35A, 100V, Half Bridge

The EPC9013 development board features the 100 V EPC2001C* enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive.The purpose of this development board is to simplify the evaluation process of the EPC2001C* eGaN FET for high current operation by including all the critical components on a singleboard that can be easily connected into any existing converter.

The EPC9013 development board is 2” x 2” and features eight EPC2001C* eGaN FETs using the Texas Instruments LM5113 gate driver. The development board configuration is recommended for high current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency. A complete block diagram of the circuit is given in Figure 1.

* Status: New Device Offered (NDO)

The GaN Experts recommend EPC2204 for new designs

NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.