Name: SISH101DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH101DN-T1-GE3TR-ND
Price: 1.548 EUR
Availability: InStock

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SISH101DN-T1-GE3
DigiKey Part Number	SISH101DN-T1-GE3TR-ND - Tape & Reel (TR) SISH101DN-T1-GE3CT-ND - Cut Tape (CT) SISH101DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISH101DN-T1-GE3
Description	MOSFET P-CH 30V 16.9A/35A PPAK
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet
EDA/CAD Models	SISH101DN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±25V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3595 pF @ 15 V
Part Status Active	Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25°C 16.9A (Ta), 35A (Tc)	Package / Case PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISH101
Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 10V

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