Name: SIS892DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS892DN-T1-GE3TR-ND
Price: 2.34 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS892DN-T1-GE3
DigiKey Part Number	SIS892DN-T1-GE3TR-ND - Tape & Reel (TR) SIS892DN-T1-GE3CT-ND - Cut Tape (CT) SIS892DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS892DN-T1-GE3
Description	MOSFET N-CH 100V 30A PPAK1212-8
Manufacturer Standard Lead Time	42 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 611 pF @ 50 V
Part Status Active	Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIS892
Rds On (Max) @ Id, Vgs 29mOhm @ 10A, 10V