Name: SIHB068N60EF-GE3
Brand: Vishay Siliconix
SKU: 742-SIHB068N60EF-GE3-ND
Price: 6.516 EUR
Availability: InStock

cms-photo-disclaimer

SIHB068N60EF-GE3
cms-digikey-product-number	742-SIHB068N60EF-GE3-ND
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIHB068N60EF-GE3
cms-description	MOSFET N-CH 600V 41A D2PAK
cms-standard-lead-time	25 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 600 V 41A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	EF
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	68mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2628 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB068