MXP120A080FW-GE3 Vishay Siliconix | Single FETs, MOSFETs

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MXP120A080FW-GE3
DigiKey Part Number	742-MXP120A080FW-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	MXP120A080FW-GE3
Description	SILICON CARBIDE MOSFET
Customer Reference
Detailed Description	N-Channel 1200 V 29A (Tc) 139W (Tc) Through Hole TO-247-3L
Datasheet	Datasheet
EDA/CAD Models	MXP120A080FW-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 2.69V @ 5mA
Series MaxSiC™	Gate Charge (Qg) (Max) @ Vgs 47.3 nC @ 18 V
Packaging Tube	Vgs (Max) +22V, -10V
Part Status Obsolete	Input Capacitance (Ciss) (Max) @ Vds 1156 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 139W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 29A (Tc)	Supplier Device Package TO-247-3L
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V	Package / Case TO-247-3

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Unit Price without VAT:	8,65000 €
Unit Price with VAT:	10,38000 €

MXP120A080FW-GE3