Name: TK9A90E,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK9A90ES4X-ND
Price: 3.768 EUR
Availability: InStock

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TK9A90E,S4X
DigiKey Part Number	TK9A90ES4X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK9A90E,S4X
Description	MOSFET N-CH 900V 9A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 900 V 9A (Ta) 50W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK9A90E,S4X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 900µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Series π-MOSVIII	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Part Status Active	Power Dissipation (Max) 50W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 900 V	Supplier Device Package TO-220SIS
Current - Continuous Drain (Id) @ 25°C 9A (Ta)	Package / Case TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK9A90
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V

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In-Stock: 60

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	3,14000 €
Unit Price with VAT:	3,76800 €

TK9A90E,S4X