Name: TK35E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK35E08N1,S1X-ND
Price: 2.148 EUR
Availability: InStock

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TK35E08N1,S1X
DigiKey Part Number	264-TK35E08N1,S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK35E08N1,S1X
Description	MOSFET N-CH 80V 55A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 55A (Tc) 72W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK35E08N1,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 300µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
Part Status Active	Power Dissipation (Max) 72W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 80 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 55A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK35E08
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
IPP12CN10LGXKSA1	Rochester Electronics, LLC	83 240	2156-IPP12CN10LGXKSA1-ND	3,94989 €	Similar
IRF8010PBF	Infineon Technologies	1 214	IRF8010PBF-ND	11,02000 €	Similar

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Tube

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Unit Price without VAT:	1,79000 €
Unit Price with VAT:	2,14800 €

TK35E08N1,S1X