RN2906FE(TE85L,F) is available for purchase but is not normally stocked.
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Toshiba Semiconductor and Storage
In Stock: 0
Unit Price: 0,21000 €
Datasheet
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
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RN2906FE(TE85L,F)

DigiKey Part Number
RN2906FE(TE85LF)CT-ND - Cut Tape (CT)
Manufacturer
Manufacturer Product Number
RN2906FE(TE85L,F)
Description
TRANS PREBIAS 2PNP 50V 100MA ES6
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Datasheet
 Datasheet
EDA/CAD Models
RN2906FE(TE85L,F) Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Manufacturer
Toshiba Semiconductor and Storage
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Packaging
Cut Tape (CT)
Current - Collector Cutoff (Max)
100nA (ICBO)
Part Status
Active
Frequency - Transition
200MHz
Transistor Type
2 PNP - Pre-Biased (Dual)
Power - Max
100mW
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
SOT-563, SOT-666
Resistor - Base (R1)
4.7kOhms
Supplier Device Package
ES6
Resistor - Emitter Base (R2)
47kOhms
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
RN2906,LFToshiba Semiconductor and Storage0RN2906LFCT-ND0,21000 €Similar
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