Name: GT30J65MRB,S1E
Brand: Toshiba Semiconductor and Storage
SKU: 264-GT30J65MRBS1E-ND
Price: 4.26 EUR
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT30J65MRB,S1E
DigiKey Part Number	264-GT30J65MRBS1E-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	GT30J65MRB,S1E
Description	IGBT 650V 60A TO-3P
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	GT30J65MRB,S1E Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors IGBTs Single IGBTs	Gate Charge 70 nC
Manufacturer Toshiba Semiconductor and Storage	Td (on/off) @ 25°C 75ns/400ns
Packaging Tube	Test Condition 400V, 15A, 56Ohm, 15V
Part Status Active	Reverse Recovery Time (trr) 200 ns
Voltage - Collector Emitter Breakdown (Max) 650 V	Operating Temperature 175°C (TJ)
Current - Collector (Ic) (Max) 60 A	Mounting Type Through Hole
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A	Package / Case TO-3P-3, SC-65-3
Power - Max 200 W	Supplier Device Package TO-3P(N)
Switching Energy 1.4mJ (on), 220µJ (off)	Base Product Number GT30J65
Input Type Standard

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

In-Stock: 0

Check Lead Time

Request Stock Notification

Quantity

All prices are in EUR

Tube

Manufacturers Standard Package

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	3,55000 €
Unit Price with VAT:	4,26000 €

GT30J65MRB,S1E