TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTW100N65G2AG

DigiKey Part Number
497-SCTW100N65G2AG-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTW100N65G2AG
Description
SICFET N-CH 650V 100A HIP247
Customer Reference
Detailed Description
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
EDA/CAD Models
SCTW100N65G2AG Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Power Dissipation (Max)
420W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCTW100
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In-Stock: 471
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
124,30000 €24,30 €
3019,49400 €584,82 €
12019,28925 €2 314,71 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:24,30000 €
Unit Price with VAT:29,16000 €