Bipolar (BJT) Transistor NPN 55 V 100 mA 200MHz 300 mW Through Hole NS-B1
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2SC33120RA

DigiKey Part Number
2SC33120RATB-ND - Tape & Box (TB)
Manufacturer
Panasonic Electronic Components
Manufacturer Product Number
2SC33120RA
Description
TRANS NPN 55V 0.1A NS-B1
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 55 V 100 mA 200MHz 300 mW Through Hole NS-B1
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Panasonic Electronic Components
Series
-
Packaging
Tape & Box (TB)
Part Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
55 V
Vce Saturation (Max) @ Ib, Ic
1V @ 10mA, 100mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA, 5V
Power - Max
300 mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
2SC3312
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Obsolete
This product is no longer manufactured.