Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3
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FJP2160DTU

DigiKey Part Number
2156-FJP2160DTU-488-ND
Manufacturer
onsemi
Manufacturer Product Number
FJP2160DTU
Description
TRANS NPN 800V 2A TO-220-3
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
ESBC™
Packaging
Bulk
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
800 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 330mA, 1A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 400mA, 3V
Power - Max
100 W
Frequency - Transition
5MHz
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
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In-Stock: 42 600
Non-Cancelable/Non-Returnable
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Will ship in approximately 10 days from Rochester Electronics LLC
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Maximum purchase limit
Bulk:42600
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
3080,83289 €256,53 €
Unit Price without VAT:0,83289 €
Unit Price with VAT:0,99947 €