N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
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IXTP8N65X2M

DigiKey Part Number
IXTP8N65X2M-ND
Manufacturer
Manufacturer Product Number
IXTP8N65X2M
Description
MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
Base Product Number
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In-Stock: 11
Factory Stock: 1 450
Check for Additional Incoming Stock
All prices are in EUR
Tube
QuantityUnit PriceExt Price
13,47000 €3,47 €
501,76760 €88,38 €
1001,60290 €160,29 €
5001,31444 €657,22 €
1 0001,22179 €1 221,79 €
2 0001,17934 €2 358,68 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,47000 €
Unit Price with VAT:4,16400 €