Name: IPT022N10NF2SATMA1
Brand: Infineon Technologies
SKU: 448-IPT022N10NF2SATMA1TR-ND
Price: 3.564 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPT022N10NF2SATMA1
DigiKey Part Number	448-IPT022N10NF2SATMA1TR-ND - Tape & Reel (TR) 448-IPT022N10NF2SATMA1CT-ND - Cut Tape (CT) 448-IPT022N10NF2SATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPT022N10NF2SATMA1
Description	MOSFET
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 29A (Ta), 236A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount PG-HSOF-8-10
Datasheet	Datasheet
EDA/CAD Models	IPT022N10NF2SATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	StrongIRFET™ 2
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 236A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.25mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 169µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-10
Package / Case	8-PowerSFN