Name: IPI60R125CPXKSA1
Brand: Infineon Technologies
SKU: IPI60R125CPXKSA1-ND
Price: 6.48 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPI60R125CPXKSA1
DigiKey Part Number	IPI60R125CPXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI60R125CPXKSA1
Description	MOSFET N-CH 650V 25A TO262-3
Customer Reference
Detailed Description	N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet
EDA/CAD Models	IPI60R125CPXKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
Part Status Not For New Designs	Power Dissipation (Max) 208W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 25A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPI60R125
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
STI33N60M2	STMicroelectronics	0	497-15016-5-ND	1,37991 €	Similar
XP60SL115DR	YAGEO XSEMI	988	5048-XP60SL115DR-ND	3,79000 €	Similar

In-Stock: 478

Check for Additional Incoming Stock

Not recommended for new design, minimums may apply View Substitutes

Quantity

All prices are in EUR

Tube