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IPI04N03LA
DigiKey Part Number	IPI04N03LAIN-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI04N03LA
Description	MOSFET N-CH 25V 80A TO262-3
Customer Reference
Detailed Description	N-Channel 25 V 80A (Tc) 107W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3877 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number	IPI04N