Name: IMZ120R060M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZ120R060M1HXKSA1-ND
Price: 11.496 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZ120R060M1HXKSA1
DigiKey Part Number	448-IMZ120R060M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZ120R060M1HXKSA1
Description	SICFET N-CH 1.2KV 36A TO247-4
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-4-1
Datasheet	Datasheet
EDA/CAD Models	IMZ120R060M1HXKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Series CoolSiC™	Vgs (Max) +23V, -7V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
Part Status Active	Power Dissipation (Max) 150W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 1200 V	Supplier Device Package PG-TO247-4-1
Current - Continuous Drain (Id) @ 25°C 36A (Tc)	Package / Case TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Base Product Number IMZ120
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V