Name: IMYR140R011M2HXLSA1
Brand: Infineon Technologies
SKU: 448-IMYR140R011M2HXLSA1-ND
Price: 30.372 EUR
Availability: InStock

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IMYR140R011M2HXLSA1
DigiKey Part Number	448-IMYR140R011M2HXLSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMYR140R011M2HXLSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1400 V 162A (Tc) 580W (Tc) Through Hole PG-TO247-4-18
Datasheet	Datasheet
EDA/CAD Models	IMYR140R011M2HXLSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 11.5mOhm @ 69.1A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 21.7mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 152 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4830 pF @ 1000 V
FET Type N-Channel	Power Dissipation (Max) 580W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C
Drain to Source Voltage (Vdss) 1400 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 162A (Tc)	Supplier Device Package PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4