Name: IMYH200R100M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMYH200R100M1HXKSA1-ND
Price: 18.54 EUR
Availability: InStock

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IMYH200R100M1HXKSA1
DigiKey Part Number	448-IMYH200R100M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMYH200R100M1HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 2000 V 26A (Tc) 217W (Tc) Through Hole PG-TO247-4-U04
Datasheet	Datasheet
EDA/CAD Models	IMYH200R100M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 131mOhm @ 10A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.5V @ 6mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 55 nC @ 18 V
Packaging Tube	Vgs (Max) +20V, -7V
Part Status Active	Power Dissipation (Max) 217W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 2000 V	Supplier Device Package PG-TO247-4-U04
Current - Continuous Drain (Id) @ 25°C 26A (Tc)	Package / Case TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Base Product Number IMYH200