IMW65R057M1HXKSA1

DigiKey Part Number
448-IMW65R057M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R057M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW65R057M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Vgs(th) (Max) @ Id
5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
133W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
All prices are in EUR
Tube
QuantityUnit PriceExt Price
110,12000 €10,12 €
308,08200 €242,46 €
1207,23108 €867,73 €
5106,38033 €3 253,97 €
1 0205,74229 €5 857,14 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.