Name: IMSQ120R040M2HHXUMA1
Brand: Infineon Technologies
SKU: 448-IMSQ120R040M2HHXUMA1TR-ND
Price: 19.296 EUR
Availability: InStock

Mosfet Array 1200V (1.2kV) 57A (Tc) 290W (Tc) Surface Mount PG-HDSOP-16-221

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IMSQ120R040M2HHXUMA1
DigiKey Part Number	448-IMSQ120R040M2HHXUMA1TR-ND - Tape & Reel (TR) 448-IMSQ120R040M2HHXUMA1CT-ND - Cut Tape (CT) 448-IMSQ120R040M2HHXUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMSQ120R040M2HHXUMA1
Description	SICFET 2N-CH 1200V 57A HDSOP16
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	Mosfet Array 1200V (1.2kV) 57A (Tc) 290W (Tc) Surface Mount PG-HDSOP-16-221
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Rds On (Max) @ Id, Vgs 40mOhm @ 18A, 18V
Manufacturer Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 5.5mA
Series CoolSiC™ G2	Gate Charge (Qg) (Max) @ Vgs 36nC @ 0V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 800V
Part Status Active	Power - Max 290W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Configuration 2 N-Channel (Half Bridge)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 1200V (1.2kV)	Package / Case 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Current - Continuous Drain (Id) @ 25°C 57A (Tc)	Supplier Device Package PG-HDSOP-16-221