Name: BSZ086P03NS3EGATMA1
Brand: Infineon Technologies
SKU: BSZ086P03NS3EGATMA1TR-ND
Price: 1.128 EUR
Availability: InStock

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BSZ086P03NS3EGATMA1
cms-digikey-product-number	BSZ086P03NS3EGATMA1TR-ND - Tape & Reel (TR) BSZ086P03NS3EGATMA1CT-ND - Cut Tape (CT) BSZ086P03NS3EGATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	BSZ086P03NS3EGATMA1
cms-description	MOSFET P-CH 30V 13.5A/40A TSDSON
cms-standard-lead-time	14 Weeks
cms-customer-reference
cms-detailed-description	P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
Datasheet	Datasheet
cms-eda-cad-models	BSZ086P03NS3EGATMA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs	57.5 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4785 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN
Base Product Number	BSZ086

cms-quantity	Unit Price	cms-ext-price
5 000	0,26107 €	1 305,35 €
10 000	0,24305 €	2 430,50 €

Unit Price without VAT:	0,94000 €
Unit Price with VAT:	1,12800 €

BSZ086P03NS3EGATMA1