Name: AIMZH120R020M1TXKSA1
Brand: Infineon Technologies
SKU: 448-AIMZH120R020M1TXKSA1-ND
Price: 23.4 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMZH120R020M1TXKSA1
DigiKey Part Number	448-AIMZH120R020M1TXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMZH120R020M1TXKSA1
Description	SIC_DISCRETE
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-11
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	25mOhm @ 43A, 20V
Vgs(th) (Max) @ Id	5.1V @ 13.7mA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 20 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	2667 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	429W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4-11
Package / Case	TO-247-4