Name: G630J
Brand: Goford Semiconductor
SKU: 3141-G630J-ND
Price: 1.488 EUR
Availability: InStock

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G630J
DigiKey Part Number	3141-G630J-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	G630J
Description	N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 11A (Tc) 83W (Tc) Through Hole TO-251
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 250mOhm @ 4.5A, 10V
Mfr Goford Semiconductor	Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®	Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 515 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 83W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 11A (Tc)	Supplier Device Package TO-251
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-251-3 Short Leads, IPAK, TO-251AA

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Unit Price without VAT:	1,24000 €
Unit Price with VAT:	1,48800 €

G630J