Name: DMT10H9M9SH3
Brand: Diodes Incorporated
SKU: 31-DMT10H9M9SH3-ND
Price: 0.70784 EUR
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMT10H9M9SH3
DigiKey Part Number	31-DMT10H9M9SH3-ND
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMT10H9M9SH3
Description	MOSFET BVDSS: 61V~100V TO251 TUB
Manufacturer Standard Lead Time	40 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 84A (Tc) 114W (Tc) Through Hole TO-251
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2085 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPAK
Base Product Number	DMT10

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Tube