ROHM Semiconductor

4th Generation SiC MOSFETs

ROHM's 4th generation SiC MOSFETs support 15 V gate-source voltage, improving application design freedom

Image of ROHM’s 4th Generation SiC MOSFETsROHM's 4th generation SiC MOSFETs provide excellent low ON resistance without sacrificing short-circuit withstand time. Features include low switching loss and support for 15 V gate-source voltage that contributes to further device power savings.

Switching Loss/ON Resistance Comparison
    Image of ROHM’s 4th Generation SiC MOSFETs - graph
Features
  • Achieves excellent low ON resistance without sacrificing short-circuit ruggedness
  • Minimizes switching loss by drastically reducing parasitic capacitance
  • Supports 15 V gate-source voltage, improving application design freedom
Applications
  • Solar inverters
  • DC/DC converters
  • Switch mode power supplies
  • Induction heating
  • Motor drives

4th Generation SiC MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
750V, 26M, 3-PIN THD, TRENCH-STRSCT4026DEC11750V, 26M, 3-PIN THD, TRENCH-STR4843 - Immediate$16.98View Details
750V, 13M, 4-PIN THD, TRENCH-STRSCT4013DRC15750V, 13M, 4-PIN THD, TRENCH-STR942 - Immediate$29.80View Details
1200V, 36M, 3-PIN THD, TRENCH-STSCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-ST4657 - Immediate$16.12View Details
750V, 26M, 4-PIN THD, TRENCH-STRSCT4026DRC15750V, 26M, 4-PIN THD, TRENCH-STR3420 - Immediate$15.86View Details
750V, 45M, 4-PIN THD, TRENCH-STRSCT4045DRC15750V, 45M, 4-PIN THD, TRENCH-STR3543 - Immediate$11.04View Details
1200V, 62M, 4-PIN THD, TRENCH-STSCT4062KRC151200V, 62M, 4-PIN THD, TRENCH-ST4440 - Immediate$10.00View Details
1200V, 36M, 4-PIN THD, TRENCH-STSCT4036KRC151200V, 36M, 4-PIN THD, TRENCH-ST4526 - Immediate$16.11View Details
1200V, 18M, 4-PIN THD, TRENCH-STSCT4018KRC151200V, 18M, 4-PIN THD, TRENCH-ST4271 - Immediate$30.40View Details
1200V, 62M, 3-PIN THD, TRENCH-STSCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST4706 - Immediate$10.76View Details
750V, 45M, 3-PIN THD, TRENCH-STRSCT4045DEC11750V, 45M, 3-PIN THD, TRENCH-STR4145 - Immediate$11.04View Details
Published: 2022-06-01

Related Videos

ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look
ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

Publish Date: 2023-09-20

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

Related Product Highlight

4th Generation Silicon Carbide SiC MOSFETs ROHM's 4th generation silicon carbide MOSFETs are designed to deliver unparalleled efficiency and performance in demanding applications.

Related Articles and Blogs

How to Reduce Losses, Improve Efficiency, and Extend Temperature Range in High-Power Applications Designers can use 4th generation SiC MOSFETs to greatly improve efficiency, lower the cost, and reduce the size of high-voltage, high-power control circuits.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
4th Generation SiC MOSFETs This presentation will provide a brief overview of ROHM’s latest SiC trench MOSFETs and their advantages for power electronics applications.