NTMFS5H4xx and NTMFS5H6xx Power MOSFETs

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Product Highlights > NTMFS5H4xx and NTMFS5H6xx Power MOSFETs

            NTMFS5H4xx and NTMFS5H6xx Power MOSFETs
                    onsemi presents power MOSFETs that deliver RDS(ON) values as low as 0.8 mΩ
    

Image of onsemi NTMFS5H4xx and NTMFS5H6xx Power MOSFETs onsemi's NTMFS5H4xx and NTMFS5H6xx 40 V and 60 V power MOSFETs deliver R_DS(ON) values as low as 0.8 mΩ, enabling significant conduction losses and improving overall operational efficiency levels. They also offer very low Q_G and input capacitance, ensuring driver losses are kept as low as possible. The devices are housed in a small footprint SO8FL package.

Features		Applications
Small footprint SO8FL (5 x 6) package Sub mΩ R_DS(ON) minimizing conduction loss 60 V: 1.3 mΩ @ 10 V (max) to 1.7 mΩ @ 4.5 V (max) 40 V: 1.1 mΩ @ 10 V (max) to 1.6 mΩ @ 4.5 V (max) Low Q_G and capacitance to minimize driver losses 60 V: 40 nC @ 4.5 V_GS (typ) to 89 nC @ 10 V_GS (typ) 40 V: 41 nC @ 4.5 V_GS (typ) to 89 nC @ 10 V_GS (typ) Further improved switching parameters 60 V: t_RR 72 ns (typ) 40 V: t_RR 59 ns (typ)		High efficiency DC-DC conversion Primary side MOSFET Secondary synchronous rectification Buck regulator High efficiency AC-DC conversion Secondary synchronous rectification Networking/telecom Servers AC adapters Handheld power tools