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NCP510x High Voltage MOSFET and IGBT Gate Drivers

onsemi offers its NCP510x MOSFET and IGBT gate drivers with a high voltage range up to 600 V

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Image of onsemi's NCP510x High Voltage MOSFET and IGBT Gate Driversonsemi's NCP510x devices are high voltage gate driver ICs providing two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side plus low-side configuration version A. A bootstrap technique is used to insure proper drive of the High-side power switch. The driver works with two independent inputs.

Features
  • High voltage range: up to 600 V
  • dv/dt immunity ± 50 V/nsec
  • Gate drive supply range from 10 V to 20 V
  • High and low drive outputs
  • Output source / sink current capability: 250 mA / 500 mA
  • 3.3 V and 5 V input logic compatible
  • Up to VCC swing on input pins
  • Matched propagation delays between both channels
  • Outputs in phase with the inputs
  • Independent logic inputs to accommodate all topologies (version A)
  • Cross conduction protection with 100 ns internal fixed dead time (version B )
  • Under VCC lockout (UVLO) for both channels
  • Pin-to-pin compatible with industry standards
Applications
  • Half-bridge power converters
  • Any complementary drive converters (asymmetrical half-bridge, active clamp) (A version only)
  • Full-bridge converters
  • Solid state motor drives
Published: 2017-05-12

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