DMNH4015SSDQ and DMTH6016LSDQ Dual MOSFETs

Featuring low figure-of-merit on-resistance and gate charge specifications, Diodes' DMNH4015SSDQ and DMTH6016LSDQ dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling cost-effective, high efficiency automotive compliant power management solutions.

Targeted at synchronous rectification applications in automotive instrumentation clusters, head-up displays, and infotainment, navigation and driver assistance systems, the DMNH4015SSDQ and DMTH6016LSDQ are qualified to AEC-Q101 and supported by a production part approval process (PPAP).

When coupled with a PWM control IC, these dual MOSFETs are capable of creating highly efficient and cost-effective DC-DC converters. The DMTH6016LSDQ, for example, when switched at a frequency of 400 kHz delivers a 5 V output with a load current of 2 A and achieves an efficiency of 95%.

Similarly, the 40 V DMNH4015SSDQ will deliver 5 V at 2 A and achieves an efficiency of 91%.

Both devices are 100% avalanche rated to withstand the high pulse energy that can result from inductive loads and are specified with a maximum junction temperature of +175°C.