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2,351 In Stock
Can ship immediately
 

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All prices are in EUR.
Price Break Unit Price Extended Price
1 4,92000 €4,92
10 4,42000 €44,20
25 4,17800 €104,45
100 3,62110 €362,11

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Alternate Package
  • Tape & Reel (TR)  : SCT2H12NYTBTR-ND
  • Minimum Quantity: 400
  • Quantity Available: 1,600 - Immediate
  • Unit Price: €3.43533
  • Digi-Reel®  : SCT2H12NYTBDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,351 - Immediate
  • Unit Price: Digi-Reel®

SCT2H12NYTB

Datasheet
Digi-Key Part Number SCT2H12NYTBCT-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT2H12NYTB
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Description SICFET N-CH 1700V 4A TO268
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268

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Customer Reference
Documents & Media
Datasheets SCT2H12NY
TO-268-2L Taping Spec
Other Related Documents SiC Flammability
MOS-2GSMD Reliability Test
Product Training Modules SiC Trench MOSFETs
Environmental Information SiC Level 1 MSL
SiC Whisker Info
SCT2750NY ESD Data
Featured Product SiC Power MOSFETs
HTML Datasheet TO-268-2L Taping Spec
Simulation Models SCT2H12NY Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Part Number SCT2H12
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SCT2H12NYTBCT