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MJ11032G Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-204 (TO-3)
Price & Procurement
11 717 In Stock
Can ship immediately Factory Stock : 54 900
 

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All prices are in EUR.
Price Break Unit Price Extended Price
1 10,27000 €10,27
10 9,43400 €94,34
25 9,04320 €226,08
100 8,06990 €806,99

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MJ11032G

Datasheet
Digi-Key Part Number MJ11032GOS-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number MJ11032G
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Description TRANS NPN DARL 120V 50A TO3
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Manufacturer Standard Lead Time 25 Weeks
Detailed Description

Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-204 (TO-3)

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Customer Reference
Documents & Media
Datasheets MJ11028,29,30,32,33
Environmental Information Material Declaration MJ11032G
HTML Datasheet MJ11028,29,30,32,33
EDA / CAD Models MJ11032G by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Tray 
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 50A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V
Power - Max 300W
Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-204 (TO-3)
Base Part Number MJ11032
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 100
Other Names MJ11032GOS