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2N6660 N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39
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3 624 In Stock
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Price Break Unit Price Extended Price
1 10,38000 €10,38
25 9,52800 €238,20

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2N6660

Datasheet
Digi-Key Part Number 2N6660MC-ND
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Manufacturer

Microchip Technology

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Manufacturer Part Number 2N6660
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Description MOSFET N-CH 60V 410MA TO39
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Manufacturer Standard Lead Time 6 Weeks
Detailed Description

N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39

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Customer Reference
Documents & Media
Datasheets 2N6660
PCN Design/Specification New DeviceDoc 30/Mar/2016
PCN Assembly/Origin Fab Site Addition 14/Aug/2014
PCN Packaging Label and Packing Changes 23/Sep/2015
HTML Datasheet 2N6660
EDA / CAD Models 2N6660 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Microchip Technology
Series -
Packaging Bulk 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 24V
FET Feature -
Power Dissipation (Max) 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-39
Package / Case TO-205AD, TO-39-3 Metal Can
 
Environmental & Export Classifications
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 500
Other Names 2N6660MC