MMDT5551 Datasheet by Diodes Incorporated

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MMDT5551 ~i i- f, SOTJGS i] D D Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0,30 0.40 H 1,80 2.20 J 7 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a o” a” Eli—é All Dimensions in mm Characterisiic Symbol Value Uni‘ Coliecior-Ease Voiiage Vcso 150 v Coliector-Emlfler Vuiiage Vch 150 v Emmy-Base Voltage VEEQ 60 v Coliedor Current - Communus (Note 1) IC 200 mA Power Dissipailon (Note 1. 2) Pu 200 mW Thermai Reslstance. Juncnon m Ammem (Note 1) Rm 525 “CM Operating and Storage Temperature Range T‘, Tm -55 m +150 “C
MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMDT5401)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: K4N, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimens mm ions in
A
M
JL
D
BC
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC 200 mA
Power Dissipation (Note 1, 2) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30172 Rev. 8 - 2
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MMDT5551
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Characteri Symbol ‘ Min ‘ Max ‘ Unit ‘ Test Condition OFF CHARACTERISTICS (Nate 6) animator-Ease Breakdown Vuuage V(ER»cBo 150 7 v IQ : 100m, IE : u Col‘ector-Emllter Breakduwn Vollage mecgo 160 7 v IQ : 1.0mA‘ IE = 0 EmMer-Base Breakdown Vonage meaao 6.0 7 v IE : UpA‘ lc : 0 HA 20V, IE : u Conemor Cumff Current I950 7 5a “A VcE 2W IE : 0‘ TA : “1010 Emily Cutoff Currenl IEEQ 7 5a nA vEB : wv, we = 0 ON CHARACTERISTICS (Nate 6) an 7 DC Current Gam hFE an 250 7 30 7 IC : SUmA‘ VcE = 5,0v 0.15 lc- OmA, la- DmA Cl‘t-EMSI‘VII v 7 v 0 at: or m. er a ura Ian 0 age casAn 0,20 lg : somA, IE = 5 am OmA, la DmA Base-Emmer Salurallon Voltage Vaasm 7 1.0 V In sum, Ia OmA SMALL SIGNAL CHARACTERISTICS Output Capacmance cm 7 6.0 pF VcE =1uw=1 OMHz‘ ‘E : 0 Small Swgna‘ Current Gam mg 50 250 7 VcE : 10v, IQ = Lam/k 1: 1,0tz Currenl Gam-Bandwxdlh Produd fr 100 300 MHz VCE - 10v, IQ — OmA, VcE = .ov‘ lc = 200m, Noise ngure NF 7 5.0 dB Rs=10kfl,f:1.0kHz [I E 0 E ,_ E B % >— L) m o L) P , POWER
Electrical Characteristics @TA = 25°C unless otherwise specified
DS30172 Rev. 8 - 2
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Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage V(BR)CBO 180 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 160 V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 V IE = 10μA, IC = 0
Collector Cutoff Current ICBO 50 nA
μA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current IEBO 50 nA VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 6)
DC Current Gain hFE
80
80
30
250
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) 0.15
0.20 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) 1.0 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain hfe 50 250 VCE = 10V, IC = 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 10mA, f = 100MHz
Noise Figure NF 8.0 dB VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
110 100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
100
150
200
0
“mm 2 g ’3 < o="" u="" ,_="" n:="" z="" m="" ,_="" at="" c="" m="" 2="" 8="" m="" l)="" d="" i="" e="" ’6="" :=""> D o [I n. E D 0 Device Packaging smpping MMDT5551-7-F SOT-363 SOHO/Tape & Ree‘ Year 1995 1999 2000 2001 2002 2003 2004 2005 2006 2007 2000 2009 201a 2011 2012 Code J K L M N P R s T u v w x Y 2 Month Jan Feb Mar Apr May Jun Jul Aug Sep on Nov Dec Code 1 2 3 4 5 6 7 a 9 o N D
1
10
1,000
100
110 100
h,
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110
100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
C
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D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current
C
1
10
1,000
100
110
f,
100
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
C
Ordering Information (Note 7)
Device Packaging Shipping
MMDT5551-7-F SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4N
K4N
YM
YM
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DS30172 Rev. 8 - 2
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MMDT5551
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

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