93AA66x, 93LC66x, 93C66x Datasheet by Microchip Technology

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Q ‘MICROCHIP Busy
2003-2011 Microchip Technology Inc. DS21795E-page 1
93AA66A/B/C, 93LC66A/B/C,
93C66A/B/C
Device Selection Table
Features:
Low-Power CMOS Technology
ORG Pin to Select Word Size for ‘66C’ Version
512 x 8-bit Organization ‘A’ Devices (no ORG)
256 x 16-bit organization ‘B’ Devices (no ORG)
Self-tImed Erase/Write Cycles (including
Auto-Erase)
Automatic Erase All (ERAL) Before Write All
(WRAL)
Power-On/Off Data Protection Circuitry
Industry Standard 3-Wire Serial I/O
Device Status Signal (Ready/Busy)
Sequential Read Function
1,000,000 Erase/Write Cycles
Data Retention > 200 Years
Pb-free and RoHS Compliant
Temperature Ranges Supported:
Pin Function Table
Description:
The Microchip Technology Inc. 93XX66A/B/C devices
are 4Kbit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA66C, 93LC66C or 93C66C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93XX66A devices are available, while the 93XX66B
devices provide dedicated 16-bit communication.
Advanced CMOS technology makes these devices
ideal for low-power, nonvolatile memory applications.
The entire 93XX Series is available in standard
packages including 8-lead PDIP and SOIC, and
advanced packaging including 8-lead MSOP, 6-lead
SOT-23, 8-lead 2x3 DFN/TDFN and 8-lead TSSOP. All
packages are Pb-free (Matte Tin) finish.
Part Number VCC Range ORG Pin Word Size Temp Ranges Packages
93AA66A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT, MC, MN
93AA66B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT, MC, MN
93LC66A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC, MN
93LC66B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC, MN
93C66A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC, MN
93C66B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC, MN
93AA66C 1.8-5.5 Yes 8- or 16-bit I P, SN, ST, MS, MC, MN
93LC66C 2.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN
93C66C 4.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN
- Industrial (I) -40°C to +85°C
- Automotive (E) -40°C to +125°C
Name Function
CS Chip Select
CLK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
VSS Ground
NC No internal connection
ORG Memory Configuration
VCC Power Supply
4K Microwire Compatible Serial EEPROM
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 2 2003-2011 Microchip Technology Inc.
Package Types (not to scale)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG
*
V
SS
PDIP/SOIC
(P, SN)
CS
CLK DI
DO
1
2
3
4
8
7
6
5
V
CC
NC ORG*
V
SS
ROTATED SOIC
(ex: 93LC46BX)
TSSOP/MSOP
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG*
V
SS
(ST, MS) SOT-23
DO
V
SS
DI
1
2
3
6
5
4
V
CC
CS
CLK
(OT)
*ORG pin is NC on A/B devices.
DFN/TDFN
CS
CLK
DI
DO
NC
ORG*
VSS
VCC
8
7
6
5
1
2
3
4
(MC, MN)
xx Busy
2003-2011 Microchip Technology Inc. DS21795E-page 3
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ..........................................................................................................-0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins  4kV
TABLE 1-1: DC CHARACTERISTICS
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
All parameters apply over the specified
ranges unless otherwise noted.
Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to +5.5V
Automotive (E): TA = -40°C to +125°C, VCC = +2.5V to +5.5V
Param.
No. Symbol Parameter Min Typ Max Units Conditions
D1 VIH1
VIH2
High-level input voltage 2.0
0.7 VCC
VCC +1
VCC +1
V
V
VCC 2.7V
VCC < 2.7V
D2 VIL1
VIL2
Low-level input voltage -0.3
-0.3
0.8
0.2 VCC
V
V
VCC 2.7V
VCC < 2.7V
D3 VOL1
VOL2
Low-level output voltage
0.4
0.2
V
V
IOL = 2.1 mA, VCC = 4.5V
IOL = 100 A, VCC = 2.5V
D4 VOH1
VOH2
High-level output voltage 2.4
VCC - 0.2
V
V
IOH = -400 A, VCC = 4.5V
IOH = -100 A, VCC = 2.5V
D5 ILI Input leakage current ±1 AVIN = VSS or VCC
D6 ILO Output leakage current ±1 AVOUT = VSS or VCC
D7 CIN,
COUT
Pin capacitance (all inputs/
outputs)
——7 pFVIN/VOUT = 0V (Note 1)
T
A = 25°C, FCLK = 1 MHz
D8 ICC write Write current
500
2
mA
A
FCLK = 3 MHz, Vcc = 5.5V
FCLK = 2 MHz, Vcc = 2.5V
D9 ICC read Read current
100
1
500
mA
A
A
FCLK = 3 MHz, VCC = 5.5V
FCLK = 2 MHz, VCC = 3.0V
FCLK = 2 MHz, VCC = 2.5V
D10 ICCS Standby current
1
5
A
A
I – Temp
E – Temp
CLK = Cs = 0V
ORG = DI = VSS or VCC
(Note 2) (Note 3)
D11 VPOR VCC voltage detect
93AA66A/B/C, 93LC66A/B/C
93C66A/B/C
1.5V
3.8V
V
V
(Note 1)
Note 1: This parameter is periodically sampled and not 100% tested.
2: ORG pin not available on ‘A’ or ‘B’ versions.
3: Ready/Busy status must be cleared from DO; see Section 3.4 "Data Out (DO)".
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 4 2003-2011 Microchip Technology Inc.
TABLE 1-2: AC CHARACTERISTICS
All parameters apply over the specified
ranges unless otherwise noted.
Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to +5.5V
Automotive (E): T
A = -40°C to +125°C, VCC = +2.5V to +5.5V
Param.
No. Symbol Parameter Min Max Units Conditions
A1 FCLK Clock frequency 3
2
1
MHz
MHz
MHz
4.5V VCC < 5.5V, 93XX66C only
2.5V VCC < 5.5V
1.8V VCC < 2.5V
A2 TCKH Clock high time 200
250
450
—ns
ns
ns
4.5V VCC < 5.5V, 93XX66C only
2.5V VCC < 5.5V
1.8V VCC < 2.5V
A3 TCKL Clock low time 100
200
450
—ns
ns
ns
4.5V VCC < 5.5V, 93XX66C only
2.5V VCC < 5.5V
1.8V VCC < 2.5V
A4 TCSS Chip Select setup time 50
100
250
—ns
ns
ns
4.5V VCC < 5.5V
2.5V VCC < 4.5V
1.8V VCC < 2.5V
A5 TCSH Chip Select hold time 0 ns 1.8V VCC < 5.5V
A6 TCSL Chip Select low time 250 ns 1.8V VCC < 5.5V
A7 TDIS Data input setup time 50
100
250
—ns
ns
ns
4.5V VCC < 5.5V, 93XX66C only
2.5V VCC < 5.5V
1.8V VCC < 2.5V
A8 TDIH Data input hold time 50
100
250
—ns
ns
ns
4.5V VCC < 5.5V, 93XX66C only
2.5V VCC < 5.5V
1.8V VCC < 2.5V
A9 TPD Data output delay time 200
250
400
ns
ns
ns
4.5V VCC < 5.5V, CL = 100 pF
2.5V VCC < 4.5V, CL = 100 pF
1.8V VCC < 2.5V, CL = 100 pF
A10 TCZ Data output disable time 100
200
ns
ns
4.5V VCC < 5.5V, (Note 1)
1.8V VCC < 4.5V, (Note 1)
A11 TSV Status valid time 200
300
500
ns
ns
ns
4.5V VCC < 5.5V, CL = 100 pF
2.5V VCC < 4.5V, CL = 100 pF
1.8V VCC < 2.5V, CL = 100 pF
A12 TWC Program cycle time 6 ms Erase/Write mode (AA and LC
versions)
A13 TWC 2 ms Erase/Write mode
(93C versions)
A14 TEC 6 ms ERAL mode, 4.5V VCC 5.5V
A15 TWL 15 ms WRAL mode, 4.5V VCC 5.5V
A16 Endurance 1M cycles 25°C, VCC = 5.0V, (Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This application is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model, which may be obtained from Microchips web
site at www.microchip.com.
RDY/BSY RDY/BSY IW (ROY/W
2003-2011 Microchip Technology Inc. DS21795E-page 5
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
FIGURE 1-1: SYNCHRONOUS DATA TIMING
TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX66B OR 93XX66C WITH ORG = 1)
TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG = 0)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
ERASE 1 11 A7 A6 A5 A4 A3 A2 A1 A0 (RDY/BSY)11
ERAL 1 00 10XXXXXX — (RDY/BSY)11
EWDS 1 00 00XXXXXX —High-Z 11
EWEN 1 00 11XXXXXX —High-Z 11
READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 D15 – D0 27
WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 – D0 (RDY/BSY)27
WRAL 1 00 01XXXXXXD15 – D0 (RDY/BSY)27
Instruction SB Opcode Address Data In Data Out Req. CLK
Cycles
ERASE 1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 (RDY/BSY)12
ERAL 1 00 10X XXX XXX — (RDY/BSY)12
EWDS 1 00 00X XXX XXX —High-Z 12
EWEN 1 00 11X XXX XXX —High-Z 12
READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 20
WRITE 1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 (RDY/BSY)20
WRAL 1 00 01X XXX XXX D7 – D0 (RDY/BSY)20
CS VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
CLK
DI
DO
(Read)
DO
(Program)
T
CSS
TDIS
TCKH TCKL
TDIH
TPD
TCSH
TPD
TCZ
Status Valid
TSV
TCZ
Note: TSV is relative to CS.
Busy Busy
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 6 2003-2011 Microchip Technology Inc.
2.0 FUNCTIONAL DESCRIPTION
When the ORG pin is connected to VCC, the (x16) orga-
nization is selected. When it is connected to ground,
the (x8) organization is selected. Instructions,
addresses and write data are clocked into the DI pin on
the rising edge of the clock (CLK). The DO pin is
normally held in a High-Z state except when reading
data from the device, or when checking the Ready/
Busy status during a programming operation. The
Ready/Busy status can be verified during an Erase/
Write operation by polling the DO pin; DO low indicates
that programming is still in progress, while DO high
indicates the device is ready. DO will enter the High-Z
state on the falling edge of CS.
2.1 Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (Read, Write, Erase, EWEN, EWDS, ERAL
or WRAL). As soon as CS is high, the device is no
longer in Standby mode.
An instruction following a Start condition will only be
executed if the required opcode, address and data bits
for any particular instruction are clocked in.
2.2 Data In/Data Out (DI/DO)
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin. In order to
limit this current, a resistor should be connected
between DI and DO.
2.3 Data Protection
All modes of operation are inhibited when VCC is below
a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices
or 3.8V for ‘93C’ devices.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
Note: For added protection, an EWDS command
should be performed after every write
operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before the initial ERASE or WRITE instruction
can be executed.
Block Diagram
Note: When preparing to transmit an instruction,
either the CLK or DI signal levels must be
at a logic low as CS is toggled active high.
Memory
Array
Data Register
Mode
Decode
Logic
Clock
Register
Address
Decoder
Address
Counter
Output
Buffer
DO
DI
ORG*
CS
CLK
VCC VSS
*ORG input is not available on A/B devices
2003-2011 Microchip Technology Inc. DS21795E-page 7
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.4 Erase
The ERASE instruction forces all data bits of the speci-
fied address to the logical ‘1’ state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed program-
ming cycle, except on ‘93C’ devices where the rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
FIGURE 2-1: ERASE TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-2: ERASE TIMING FOR 93C DEVICES
CS
CLK
DI
DO
TCSL
Check Status
111ANAN-1 AN-2 ••• A0
TSV TCZ
Busy Ready
High-Z
TWC
High-Z
CS
CLK
DI
DO
TCSL
Check Status
111ANAN-1 AN-2 ••• A0
TSV TCZ
Busy Ready
High-Z
TWC
High-Z
NCLX
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 8 2003-2011 Microchip Technology Inc.
2.5 Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL).
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
VCC must be 4.5V for proper operation of ERAL.
FIGURE 2-3: ERAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-4: ERAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
TCSL
Check Status
100 10x
••• x
TSV TCZ
Busy Ready
High-Z
TEC
High-Z
VCC must be 4.5V for proper operation of ERAL.
CS
CLK
DI
DO
TCSL
Check Status
100 10x
••• x
TSV TCZ
Busy Ready
High-Z
TEC
High-Z
WWWW? fl 06% WWW-9%
2003-2011 Microchip Technology Inc. DS21795E-page 9
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.6 Erase/Write Disable and Enable
(EWDS/EWEN)
The 93XX66A/B/C powers up in the Erase/Write
Disable (EWDS) state. All Programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or Vcc is removed from the device.
To protect against accidental data disturbance, the
EWDS instruction can be used to disable all erase/write
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.
FIGURE 2-5: EWDS TIMING
FIGURE 2-6: EWEN TIMING
2.7 Read
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string. The output data bits will toggle on
the rising edge of the CLK and are stable after the
specified time delay (TPD). Sequential read is possible
when CS is held high. The memory data will
automatically cycle to the next register and output
sequentially.
FIGURE 2-7: READ TIMING
CS
CLK
DI 10
000x ••• x
TCSL
1x
CS
CLK
DI 00 1 1x
TCSL
••
CS
CLK
DI
DO
110
An ••• A0
High-Z 0Dx ••• D0 Dx ••• D0 ••
Dx D0
MUM—WNW hi 3* S WHUWULT
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 10 2003-2011 Microchip Technology Inc.
2.8 Write
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AA66A/B/C and 93LC66A/B/C
devices, after the last data bit is clocked into DI, the
falling edge of CS initiates the self-timed auto-erase and
programming cycle. For 93C66A/B/C devices, the self-
timed auto-erase and programming cycle is initiated by
the rising edge of CLK on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
FIGURE 2-8: WRITE TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-9: WRITE TIMING FOR 93C DEVICES
CS
CLK
DI
DO
101AN••• A0 Dx ••• D0
Busy Ready High-Z
High-Z
TWC
TCSL
TCZ
TSV
CS
CLK
DI
DO
101AN••• A0 Dx ••D0
Busy Ready High-Z
High-Z
TWC
TCSL
TCZ
TSV
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2003-2011 Microchip Technology Inc. DS21795E-page 11
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.9 Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AA66A/B/C and 93LC66A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C66A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruction,
but the chip must be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
VCC must be 4.5V for proper operation of WRAL.
FIGURE 2-10: WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11: WRAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
HIGH-Z
10001 x
•• xDx D0
High-Z Busy Ready
TWL
VCC must be 4.5V for proper operation of WRAL.
TCSL
TSV TCZ
CS
CLK
DI
DO
HIGH-Z
10001 x
••• xDx ••• D0
High-Z Busy Ready
TWL
TCSL
TSV TCZ
Busy /Busy Busy
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 12 2003-2011 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
TABLE 3-1: PIN DESCRIPTIONS
3.1 Chip Select (CS)
A high level selects the device; a low level deselects
the device and forces it into Standby mode. However, a
programming cycle which is already in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brought low during a program cycle, the
device will go into Standby mode as soon as the
programming cycle is completed.
CS must be low for 250 ns minimum (T
CSL) between
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
3.2 Serial Clock (CLK)
The Serial Clock is used to synchronize the communi-
cation between a master device and the 93XX series
device. Opcodes, address and data bits are clocked in
on the positive edge of CLK. Data bits are also clocked
out on the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to Clock High Time (TCKH) and
Clock Low Time (TCKL). This gives the controlling
master freedom in preparing opcode, address and
data.
CLK is a “don’t care” if CS is low (device deselected). If
CS is high, but the Start condition has not been
detected (DI = 0), any number of clock cycles can be
received by the device without changing its status (i.e.,
waiting for a Start condition).
CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.
After detection of a Start condition the specified number
of clock cycles (respectively low-to-high transitions of
CLK) must be provided. These clock cycles are
required to clock in all required opcode, address and
data bits before an instruction is executed. CLK and DI
then become “don’t care” inputs waiting for a new Start
condition to be detected.
3.3 Data In (DI)
Data In (DI) is used to clock in a Start bit, opcode,
address and data synchronously with the CLK input.
3.4 Data Out (DO)
Data Out (DO) is used in the Read mode to output data
synchronously with the CLK input (TPD after the posi-
tive edge of CLK).
This pin also provides Ready/Busy status information
during erase and write cycles. Ready/Busy status infor-
mation is available on the DO pin if CS is brought high
after being low for minimum Chip Select Low Time
(T
CSL) and an erase or write operation has been
initiated.
The Status signal is not available on DO, if CS is held
low during the entire erase or write cycle. In this case,
DO is in the High-Z mode. If status is checked after the
erase/write cycle, the data line will be high to indicate
the device is ready.
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
3.5 Organization (ORG)
When the ORG pin is connected to VCC or Logic HI, the
(x16) memory organization is selected. When the ORG
pin is tied to VSS or Logic LO, the (x8) memory
organization is selected. For proper operation, ORG
must be tied to a valid logic level.
93XX66A devices are always (x8) organization and
93XX66B devices are always (x16) organization.
Name PDIP SOIC TSSOP MSOP DFN(1) TDFN(1) SOT-23 Rotated
SOIC Function
CS 1 1 1 1 1 1 5 3 Chip Select
CLK 2 2 2 2 2 2 4 4 Serial Clock
DI 3 3 3 3 3 3 3 5 Data In
DO 4 4 4 4 4 4 1 6 Data Out
VSS 5 5 5 5 5 5 2 7 Ground
ORG/NC 6 6 6 6 6 6 N/A 8 Organization / 93XX66C
No Internal Connection /
93XX66A/B
NC 7 7 7 7 7 7 N/A 1 No Internal Connection
VCC 8 8 8 8 8 8 6 2 Power Supply
Note 1: The exposed pad on the DFN/TDFN package may be connected to VSS or left floating.
23:: m u H. .H H .H H. H U .H H. .H @H. H u 6 M .H .H OH. H OH Hmfluu .H @H. Om» .H H H OH .H OH. 5...: Egg H u .H H. H H u .H H. W O H Auu .H @H. Om» H OH .H OH. EE
2003-2011 Microchip Technology Inc. DS21795E-page 13
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
Example:
6-Lead SOT-23
8-Lead MSOP (150 mil) Example:
XXXXXXT
YWWNNN
3L66BI
5281L7
XXNN 3EL7
T/XXXNNN
XXXXXXXX
YYWW
8-Lead PDIP
8-Lead SOIC
XXXXYYWW
XXXXXXXT
NNN
XXXX
TYWW
8-Lead TSSOP
NNN
I/P 1L7
93LC66B
0528
Example:
Example:
SN 0528
93LC66BI
1L7
1L7
L66B
I528
Example:
3
e
3
e
8-Lead 2x3 DFN Example:
374
528
L7
XXX
YWW
NN
8-Lead 2x3 TDFN Example:
E74
528
L7
XXX
YWW
NN
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 14 2003-2011 Microchip Technology Inc.
Note: T = Temperature grade (I, E)
NN = Alphanumeric traceability code
Part Number
1st Line Marking Codes
TSSOP MSOP SOT-23 DFN TDFN
I Temp. E Temp. I Temp. E Temp. I Temp. E Temp.
93AA66A A66A 3A66AT 3BNN 361 E61
93AA66B A66B 3A66BT 3LNN 371 E71
93AA66C A66C 3A66CT 381 E81
93LC66A L66A 3L66AT 3ENN 3FNN 364 E64 E65
93LC66B L66B 3L66BT 3PNN 3RNN 374 E74 E75
93LC66C L66C 3L66CT 384 E84 E85
93C66A C66A 3C66AT 3HNN 3JNN 367 E67 E68
93C66B C66B 3C66BT 3TNN 3UNN 377 E77 E78
93C66C C66C 3C66CT 387 E87 E88
Legend: XX...X Part number or part number code
T Temperature (I, E)
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code (2 characters for small packages)
Pb-free JEDEC designator for Matte Tin (Sn)
Note: For very small packages with no room for the Pb-free JEDEC designator
, the marking will only appear on the outer carton or reel label.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
8-Lead Plastic Micro Small Outline Package (MS) [MSOP] Q 010 C _ SEATING PLANE _T—f J SIDE VIEW A1 * fl/ SEE DETA‘LC _ “—E _ J END VIEW Microcmp Techno‘ogy Drawmg CU47111C Sheet 1 cl 2
2003-2011 Microchip Technology Inc. DS21795E-page 15
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
S-Lead Plastic Micro Small Outline Package (MS) [MSOP] SEATING PLANE L (P (U) DETAIL c Unils MILLlMETERS Dimension Limile MIN NOM MAX Number ol Pins N | a \ Pilch e 0.65 380 Overall Heighl A . . 1 m Molded Package Thickness A2 0 75 D 85 D 95 Slandoli Al 0 no . u 15 Overall Width E 4 80 BSC Molded Package Width E1 3 DU 580 Overall Lenglh D 3 00 880 Pool Length L 0 Au | 0 60 l o as Footprint L1 0 95 REF Foot Angle «2 0" - a“ Lead Thickness c 0 ca , o 23 Lead widlri o o 22 , 0 4o Notes: 1 2 3 Pin 1 visual index lealure may vary‘ but mus| be localed Wilnin lne halched area Dimensions D and El do nol include rnold llasri or prolrusions. Mold llash or piolmsions shall not exceed 0.15mi per side Dimensidning and lolerancing per ASME v14 5M ass. Basic Dimension. Theorelically exacl value shown wilhool lolerances. REF: Relerence Dimension usually wilhoul tolerance, lor inlorrnalion purposes only. Microchip Technology Drawing 00471110 Sheet 2 M2
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 16 2003-2011 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
S-Lead Plastic Micro SmaH Outline Package (MS) [MSOP] ’* ” ' \ SILK SCREEN I 1 —><—gx recommended="" land="" pattern="" untts="" millimeters="" dimenston="" lnnits="" mw="" \="" nom="" \="" max="" contact="" pllch="" e="" 0.65="" bsc="" contact="" pad="" spacing="" c="" 4.40="" mean="" width="" 2="" 5.35="" contact="" pad="" width="" (x8)="" x1="" 0.45="" contact="" pad="" length="" (xs)="" y1="" 1.45="" d1stanee="" between="" pads="" (31="" 2.95="" d1stanee="" between="" pads="" gx="" 0.20="" notes="" 1="" dimenstomng="" and="" tolerancmg="" perasme="" y1a="" 5m="" bsc="" bash:="" dtmensiun="" theuraticahy="" exact="" vatue="" shown="" wilhuut="" tolerances="" mtcrocmp="" technotogy="" drawmg="" no="" 00472111a="">
2003-2011 Microchip Technology Inc. DS21795E-page 17
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TV, HERE EHthfl
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 18 2003-2011 Microchip Technology Inc.
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b
E
4
N
E1
PIN1IDBY
LASER MARK
D
123
e
e1
A
A1
A2 c
L
L1
φ
   
6-Lead P‘astic SmaH Outline Transistor (OT) [SOT-23] X f 7 Y i 2 C G ” i SM— SCREEN 7 I I O | | ——— <— gx="" _—="" e=""><— recommended="" land="" pattern="" unlls="" mtllimeters="" dlmenston="" lells="" nhn="" \="" nom="" |="" max="" conlact="" pttch="" e="" u="" 95="" 550="" contact="" pad="" spaclng="" c="" 2="" 30="" contact="" pao="" wtdth="" (x6)="" x="" 0="" 60="" contact="" pad="" lengtn="" (xe)="" y="" 1="" 10="" dtstance="" between="" pads="" g="" 1.70="" dtstance="" between="" pads="" gx="" 0.35="" overan="" wtdlh="" z="" 3="" 90="" notes="" 1="" dtmenstumng="" and="" lolerancmg="" perasme="" v14="" sm="" 556.="" base="" dtmension="" theoretical‘y="" exact="" va‘ue="" shown="" wilhwt="" tolerances.="" mtcrochip="" tecnnotogy="" drawing="" no="" 00472028a="">
2003-2011 Microchip Technology Inc. DS21795E-page 19
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N1234
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 20 2003-2011 Microchip Technology Inc.
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    
    
    
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N
E1
NOTE 1
D
123
A
A1
A2
L
b1
b
e
E
eB
c
   
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm Body [SOIC] A1 4» fi‘ 5 SIDE VIEW A‘J "T 45 L! 4»: VIEW A-A Mlcmchlp Technology Drawmg No. comma Shea: 1 ol 2
2003-2011 Microchip Technology Inc. DS21795E-page 21
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm Body [SOIC] UHlls MILLlMETERS Drrnenslon Limits MIN l NOM l MAX Number ot Plrls N 5 Film e 1.27 BSC Overall Heigm A . . 1.75 Molded Package Thickness A2 1.25 . . Stands" § A1 0.10 . 0.25 Overall Wldth E 5.00 BSC Molded Package Wldlh E1 3.90 850 Overall Length D 4.90 350 cnamter (Optional) n 0.25 . 0.50 Fool Lengtn L 0.40 . 1.27 Foolprlnl L1 1.04 REF Fool Angle w 0° . 5° Lead Thickness c 0.17 — 0.25 Lead Wldlh a 0.31 — 0.51 Mold malt Angle Top at 5° — 15° Mold Dian Angle Bollom 73 5° — 15° Notes: 1. Plrl 1 vlsual lndex fealure may vary, hul must be located wiinrn ine hatched area 2. § Slgrliflcarll cnaractenstio 3 Dlmenslans D and E1 do not lnclude mold flash or prulmslons Mold flash or protrusions shall not exceed 0.15mrn per side 4. Drmensionrng and toleraneing per ASME v14 5M 55c: Baslc Dlmenslon Theorellcally exact value shown wrlnout tolerances REF: Relerence Dlmenslon, usually wllhoul tolerance. for lnlormallon purposes only Mlcrachip Technology Diawing No c047057c Sheet 2 012
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 22 2003-2011 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Notes: / S‘LK SCREEN LJULJ A X1 RECOMMENDED LAND PATI'ERN Umts MILUMETERS Dwmension mewts MIN \ NOM \ MAX Con'ad Fimh E 1.27 BSC (:0an Pad Spacmg c 5 40 Con'ad Fad wmm (X8) X1 0.60 Comacl Pad Length (x5) w 1 55 1 Dimensmning and (o‘erancing per ASME v14 5M BSC Basic Dimenswon. Theorencauy exact value shown wnnom merances. Mucmnmp Technolagy Drawmg No GOA-2057A
2003-2011 Microchip Technology Inc. DS21795E-page 23
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 24 2003-2011 Microchip Technology Inc.
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  
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D
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12
b
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c
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87Lead Plastic Thin Shrink Small Outline (ST) , 4.4 mm Body [TSSOP] c1 . I ‘ F E |::| |::| if G x1 7 ‘ _. w .— SlLK SCREEN RECOMMENDED LAND PATTERN Untts MILLlMETERS Dimension Limits MIN | NOM | MAX Conlacl Pttcn E 0.65 850 Conlacl Pad Spacing c1 5 so Conlacl Pad Width (xe) x1 0.45 Contact Pad Length (xe) w 1.45 Distance Between Pads <3 0="" 20="" notes'="" 1="" dimensioning="" and="" lolerancing="" per="" asme="" y14="" 5m="" bsc'="" easlc="" dlmenslon="" tneurellcally="" exacl="" value="" shawn="" without="" lalerances="" microchip="" tecnncicgy="" drawing="" no.="" cda-zdbea="">
2003-2011 Microchip Technology Inc. DS21795E-page 25
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Dual Flat, No Lead Package (MC) — 2x3x0.9 mm Body [DFN] \\ / \\ \\ ///// \\\\\ / /// \ \\\\J / b/fl AwNAZ
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 26 2003-2011 Microchip Technology Inc.
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    
    
  
D
N
E
NOTE 1
12
EXPOSED PAD
NOTE 1
21
D2
K
L
E2
N
e
b
A3 A1
A
NOTE 2
BOTTOM VIEW
TOP VIEW
   
8-Lead Plastic Dual Flat, No Lead Package (MC) - 2x3x0.9mm Body [DFN] C1 T2 l -i i S S S 1 S‘LK SCREEN RECOMMENDED LAND PATTERN Umts MILLtMETERS Dtmenslan Ltmtts MIN NOM MAX Contacl leh E U 50 BSC Opttona‘ Cemer Pad Wldlh W2 1 45 Opltonat Center Pad Length T2 1 75 Contact Pad Spacmg C1 2 so COMBCI Pad Wldlh (XE) X1 0 30 Contact Pad Lengtn (x5) Y1 o 75 Dustance Between Pads (3 0.20 Notes: 1.Dimenstomng and tolerancing per ASME YMEM asc Basic Dtmenston. Theorettcatty exact value shown wtthout toterances. Microchtp Teennotegy Drawtng No. 004721235
2003-2011 Microchip Technology Inc. DS21795E-page 27
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Dual Flat, No Lead Package (MN) — 2x3x0.75mm Body [TDFN] TOP VIEW //o1ac A1 A _i F 5-. SEAT‘NG PLANE;— ,\ New o1o®cMa| $o.os®c BOTTOM VIEW Micmcmp Technology Drawing No. 00471290 Sheet 1 of 2
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 28 2003-2011 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Dual Flat, No Lead Package (MN) — 2x3x0.75mm Body [TDFN] NOTEZ Units MILLIMETERS Dwmensmn Limits MIN 1 NOM | MAX Number of Plns N 8 Pitch e 0.50 BSC Overaii Hewght A 0 70 0 75 0 80 Standofi A1 0.00 0.02 0.05 Contaci Thickness A3 0.20 REF OveraH Length D 2.00 580 Overaii Wwdih E 3.00 BSC Exposed Pad Length D2 1 20 - 1 60 Exposed Pad Width E2 1.20 - 1.50 Contaci Wwdth b 0.20 0.25 0.30 Contact Length L 0.25 0.30 0.45 ContacHorExposed Pad K 0.20 . . Notes: 1. Pm 1 Visual index ieaiure may vary, bui must be located wwthm ihe hatched area. 2. Package may have one or more exposed tie bars at ends 3 Package is saw smguiaied 4 Dwmensiening and toieraneing per ASME v14 5M BSC: Baswc Dwmension TheoretwcaHy exact value shown wwthout tolerances. REF. Reference Dimension. usuaHy wxihout tolerance, for mformation purposes on‘y. Mlcrochwp Technology Drawmg No. 004-1290 Sheet 2 012
2003-2011 Microchip Technology Inc. DS21795E-page 29
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
W2 SILK SCREEN *le - fl UH ———:L0000H .04 h * RECOMMENDED LAND PATTERN Units MILLIMETERS Dimension Limits MiN \ NOM \ MAX Contact Pitch E 0.50 Bsc Optionai Cenler Pad Wid|h wz 1.46 Optionai Cenler Pad Length T2 1.36 Contact Pad Spacing Ci 3.00 Contact Pad Wiaih (x0) x1 0.30 Centeet Pad Length (x5) Y1 0.75 Dieianee Between Pads G 0 20 Notes: 1. Dimensiomng and toierencing per ASME Y14.5M BSC: Basic Dimension. Theareticaiiy exact vaiue shown without tolerances. Microchip Teennuiogy Drawing No 004-21ng
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 30 2003-2011 Microchip Technology Inc.
 .',/0"11#(23$% .
 

2003-2011 Microchip Technology Inc. DS21795E-page 31
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
APPENDIX A: REVISION HISTORY
Revision A (5/2003)
Original Release.
Revision B (12/2003)
Corrections to Section 1.0, Electrical Characteristics.
Section 4.1, 6-Lead SOT-23 package to OT.
Revision C (4/2005)
Added DFN package.
Revision D (5/2008)
Revised Figures 2-1 through 2-4 and Figures 2-8
through 2-11; Revised Package Marking Information;
Replaced Package Drawings; Revised Product ID
section.
Revision E (12/2011)
Added TDFN package.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 32 2003-2011 Microchip Technology Inc.
NOTES:
2003-2011 Microchip Technology Inc. DS21795E-page 33
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
THE MICROCHIP WEB SITE
Microchip provides online support via our WWW site at
www.microchip.com. This web site is used as a means
to make files and information easily available to
customers. Accessible by using your favorite Internet
browser, the web site contains the following
information:
Product Support – Data sheets and errata,
application notes and sample programs, design
resources, user’s guides and hardware support
documents, latest software releases and archived
software
General Technical Support – Frequently Asked
Questions (FAQ), technical support requests,
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representatives
CUSTOMER CHANGE NOTIFICATION
SERVICE
Microchip’s customer notification service helps keep
customers current on Microchip products. Subscribers
will receive e-mail notification whenever there are
changes, updates, revisions or errata related to a
specified product family or development tool of interest.
To register, access the Microchip web site at
www.microchip.com. Under “Support”, click on
“Customer Change Notification” and follow the
registration instructions.
CUSTOMER SUPPORT
Users of Microchip products can receive assistance
through several channels:
Distributor or Representative
Local Sales Office
Field Application Engineer (FAE)
Technical Support
Development Systems Information Line
Customers should contact their distributor,
representative or field application engineer (FAE) for
support. Local sales offices are also available to help
customers. A listing of sales offices and locations is
included in the back of this document.
Technical support is available through the web site
at: http://microchip.com/support
ns
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 34 2003-2011 Microchip Technology Inc.
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip
product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our
documentation can better serve you, please FAX your comments to the Technical Publications Manager at
(480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
TO: Technical Publications Manager
RE: Reader Response
Total Pages Sent ________
From: Name
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Address
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Telephone: (_______) _________ - _________
Application (optional):
Would you like a reply? Y N
Device: Literature Number:
Questions:
FAX: (______) _________ - _________
DS21795E93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
PARTNO. X X X [XX X *1 1 T T I v
2003-2011 Microchip Technology Inc. DS21795E-page 35
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: 93AA66A: 4K 1.8V Microwire Serial EEPROM
93AA66B: 4K 1.8V Microwire Serial EEPROM
93AA66C: 4K 1.8V Microwire Serial EEPROM w/ORG
93LC66A: 4K 2.5V Microwire Serial EEPROM
93LC66B: 4K 2.5V Microwire Serial EEPROM
93LC66C: 4K 2.5V Microwire Serial EEPROM w/ORG
93C66A: 4K 5.0V Microwire Serial EEPROM
93C66B: 4K 5.0V Microwire Serial EEPROM
93C66C: 4K 5.0V Microwire Serial EEPROM w/ORG
Pinout: Blank = Standard pinout
X = Rotated pinout
Tape & Reel: Blank = Standard packaging
T=Tape & Reel
Temperature Range: I = -40°C to +85°C
E = -40°C to +125°C
Package: MS = Plastic MSOP (Micro Small outline), 8-lead
OT = Plastic SOT-23, 6-lead (Tape & Reel only)
P = Plastic DIP (300 mil body), 8-lead
SN = Plastic SOIC (3.90 mil body), 8-lead
ST = Plastic TSSOP (4.4 mm body), 8-lead
MC = Plastic DFN (2x3x0.90 mm body), 8-lead
MNY(1)= Plastic TDFN (2x3x0.75 mm body), 8-lead
(Tape & Reel only)
Examples:
a) 93AA66C-I/P: 4K, 512x8 or 256x16 Serial
EEPROM, PDIP package, 1.8V
b) 93AA66B-I/MS: 4K, 256x16 Serial EEPROM,
MSOP package, 1.8V
c) 93AA66AT-I/OT: 4K, 512x8 Serial EEPROM,
SOT-23 package, tape and reel, 1.8V
d) 93AA66CT-I/SN: 4K, 512x8 or 256x16 Serial
EEPROM, SOIC package, tape and reel, 1.8V
a) 93LC66A-I/MS: 4K, 512x8 Serial EEPROM,
MSOP package, 2.5V
b) 93LC66BT-I/OT: 4K, 256x16 Serial EEPROM,
SOT-23 package, tape and reel, 2.5V
c) 93LC66B-I/ST: 4K, 256x16 Serial EEPROM,
TSSOP package, 2.5V
d) 93LC66CT-I/MNY: 4K, 512x8 or 256x16 Serial
EEPROM, TDFN package, tape and reel, 2.5V
a) 93C66B-I/MS: 4K, 256x16 Serial EEPROM,
MSOP package, 5.0V
b) 93C66C-I/SN: 4K, 512x8 or 256x16 Serial
EEPROM, SOIC package, 5.0V
c) 93C66AT-I/OT: 4K, 512x8 Serial EEPROM,
SOT-23 package, tape and reel, 5.0V
d) 93C66BX-I/SN: 4K, 256x16 Serial EEPROM,
rotated SOIC package, 5.0V
PART NO. X/XX
Package
Temperature
Range
Device
X
Lead Finish
X
Tape & Reel
X
Pinout
Note 1: “Y” indicates a Nickel Palladium Gold (NiPdAu) finish.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795E-page 36 2003-2011 Microchip Technology Inc.
NOTES:
QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV = ISO/TS 169492009: (2
2003-2011 Microchip Technology Inc. DS21795E-page 37
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003-2011, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-61341-903-8
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
’8‘ MICROCHIP AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE
DS21795E-page 38 2003-2011 Microchip Technology Inc.
AMERICAS
Corporate Office
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Chandler, AZ 85224-6199
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Worldwide Sales and Service
11/29/11

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