FFB2222A, FMB2222A, MMPQ2222A Datasheet by ON Semiconductor

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FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4
October 2015
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General-Purpose Amplifier
Block Diagram
Figure 1. FFB2222A Device Package Figure 2. FFB2222A Internal Connection
Figure 3. FMB2222A Device Package Figure 4. FMB2222A Internal Connection
Figure 5. MMPQ2222A Device Package Figure 6. MMPQ2222A Internal Connection
C1
B2
E2
E1
B1
C2
pin #1
SC70-6
Mark: .1P
E2
B2
C1
C2
B1
E1
SuperSOT-6
Mark: .1P
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
C2
E1
C1
B2
E2
B1
SOIC-16
Mark:
MMPQ2222A
C1C1C2C2C3C3C4
C4
E1 B1 E2 B2E3 B3E4B4
pin #1
B4E4B3E3B2E2B1E1
C4C4C3C3C2C2C1C1
Description
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced
from process 19.
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 2
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB2222A .1P SC70 6L Tape and Reel
FMB2222A .1P SSOT 6L Tape and Reel
MMPQ2222A MMPQ2222A SOIC 16L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 500 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
FFB2222A FMB2222A MMPQ2222A
PD
Total Device Dissipation 300 700 1,000 mW
Derate Above 25°C 2.4 5.6 8.0 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient 415 180
°C/W
Thermal Resistance, Junction-to-Ambient,
Effective 4 Dies 125
Thermal Resistance, Junction-to-Ambient,
Each Die 240
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V(BR)CEO Collector-Emitter Breakdown Voltage(3) I
C = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 V
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 10 nA
IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
hFE DC Current Gain
IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 150 mA, VCE = 10 V(3) 100 300
IC = 150 mA, VCE = 1.0 V(3) 50
IC = 500 mA, VCE = 10 V(3) 40
VCE(sat) Collector-Emitter Saturation Voltage(3) IC = 150 mA, IB = 15 mA 0.3 V
IC = 500 mA, IB = 50 mA 1.0
VBE(sat) Base-Emitter Saturation Voltage(3) IC = 150 mA, IB = 15 mA 1.2 V
IC = 500 mA, IB = 50 mA 2.0
fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0,
f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 20 pF
NF Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB
tdDelay Time VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
8ns
trRise Time 20 ns
tsStorage Time VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
180 ns
tfFall Time 40 ns
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature Fig ur e 12. E mi tter Tra ns ition an d Outpu t
Capacitance vs. Reverse Bias Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CE S AT
25 °C
C
β= 10
125 °C
- 40 °C
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 °C
125 °C
- 40 °C
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE (ON )
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
Cob
C
te
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 5
Typical Performance Characteristics (Continued)
Figure 13. Turn-On and Turn-Off Times vs.
Collector Current Figure 14. Switching Time vs. Collector Current
F i g u r e 1 5 . P o w e r D i s s i p a t i o n v s .
Ambient Temperature Figure 16. Common Emitter Characteristics
Figure 17. Common Emitter Characteristics Figure 18. Common Emitter Characteristics
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2
Ic
10
V = 25 V
cc
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
Ic
10
V = 25 V
cc
tf
td
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
hie
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 10 mA
C
hoe
hre
hfe
hie
o
o
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
hre
hfe
h ie
I = 10 mA
C
FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 6
Test Circuits
Figure 19. Saturated Turn-On Switching Time
Figure 20. Saturated Turn-Off Switching Time
30 V
1.0 KΩΩ
ΩΩ
Ω
16 V
0
200ns 500 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
200ns
50 ΩΩ
ΩΩ
Ω
37 ΩΩ
ΩΩ
Ω
- 1.5 V
1.0 KΩΩ
ΩΩ
Ω
6.0 V
0
30 V
1k
SYMM ‘E .—2.0o:o.20 ~| 0.65 l— L I E 0.50 MIN 7 I' "I 6 : : : 4 PIN ONEfl -~§+—+—+—— 1.25:0.10 O 1 : : : (0.25) I'” » —* 0.65 ‘— 1.30 71.00 0.80 ‘7 0.40 MIN LAN D PATTERN RECOMM EN DATION SEE DETAIL A \ 1.10 I I I 7 7 / 0.00 PLANE GAGE PLANE DETAIL A SCALE 50x 010i I 0.10 (3 ~ szomsoa/I SEATING / NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ 5088, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DIMENSIONING AND TOLERANCING PER ASME YI4.5M-2009 E) DRAWING FILENAME: MKT-MAA06AREV7 FAIRBHII—Dn.
NOTES UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC M0493 VAR AA, ISSUE E 5) ALL DIMENSIONS ARE IN MILLIMETERS APACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH‘ PROTRUSIQNS OR GATE auRRS MOLD FLASH‘ PROTRUSIQNS OR GATE auRRS SHALL NOT EXCEED a 25mm PER END PACKAGE WIDTH DOES NOT INCLuDE INTERLEAD FLASH OR PROTRUSION INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED a 25mm PER SIDE PACKAGE LENGTH AND WIDTH DIMENSIONS ARE DETERMINED AT DATUM H DI DRAWING FILE NAME MKTVMADEAREVF «we»
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING FILE NAME: MKT-MA06AREVF
1.00
0.70
0.10
0.00
SEATING PLANE
0.60 REF
0.55
0.35
SCALE: 50X
DETAIL A
SEE DETAIL A
GAGE PLANE
0.25
1.10 MAX
0.20
0.08
0.950.95
3.00
2.80
0.70 MIN
LAND PATTERN RECOMMENDATION
3.00
2.60
0.50
0.30
1.90
0.95
1.70
1.50
1.00 MIN
2.60
SYMM
C
L
(0.30)
1
6
3
4
C
A B
C
0.20 M
0.10
A
B
H
C
C
PIN #1
FRONT VIEW
TOP VIEW
SEE DETAIL A
SEATING PLANE
C
GAGE PLANE

DETAIL A
SCALE: 2:1
B
A
6.00
8.89
4.00
3.80
10.00
9.80
(0.30) 1.27
0.25
0.05
1.75 MAX
0.25
0.19
0.36
0.50
0.25
R0.10
R0.10
0.90
0.50 (1.04)
0.25 C B A
0.10 C
NOTES:
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-2009
E) LANDPATTERN STANDARD:
SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV13.
LAND PATTERN RECOMMENDATION
1
16
8
9
0.51
0.31
1.50
1.25
3.85
7.35
1.27 0.65
1.75
8.89
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www.onsemi.com
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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