BZT03 Series Datasheet by Vishay Semiconductor Diodes Division

VISHAY. RoHS comma wwwv' hay om/do 99912 mom FREE ab‘e DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogeQlehamcom www.v\shay,com/doc?91000

BZT03-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 1Document Number: 85599

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Zener Diodes with Surge Current Specification

DESIGN SUPPORT TOOLS

FEATURES

• Glass passivated junction

• Hermetically sealed package

• Clamping time in picoseconds

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Medium power voltage regulators and medium power

transient suppression circuits



PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

VZ range nom. 6.2 to 300 V

Test current IZT 2 to 100 mA

VZ specification Pulse current

Circuit configuration Single

949539

click logo to get started

Available

Models

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY

BZT03C6V2 BZT03C6V2-TR 5000 per 10" tape and reel 25 000

BZT03C6V2 BZT03C6V2-TAP 5000 per ammopack 25 000

PACKAGE

PACKAGE NAME WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS

SOD-57 369 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation I = 10 mm, TL = 25 °C Ptot 3250 mW

Tamb = 25 °C Ptot 1300

Repetitive peak reverse power dissipation PZRM 10 W

Non repetitive peak surge power dissipation tp = 100 μs, Tj = 25 °C PZSM 600 W

Junction to ambient air I = 10 mm, TL = constant RthJA 46 K/W

On PC board with spacing 25 mm RthJA 100

Junction temperature Tj175 °C

Storage temperature range TS-65 to +175 °C

Forward voltage (max.) IF = 0.5 A VF1.2 V

VISHAY. DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogtevlshayxom www.v\shay.com/doc?91000

BZT03-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 2Document Number: 85599

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) 10/1000 exp. falling pulse tp = 1000 μs down to 50 %

(2) Stand-off voltage = recommended suplly voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART

NUMBER

ZENER VOLTAGE

RANGE

TEST

CURRENT

REVERSE

LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT CLAMPING (1) STAND

OFF (2)

VZ at IZT1 IZT1 IR at VRZZ at IZT1 TCVZ at IZT1 V(CL)R at IRMS IR at VR

VmA μA V%/K V A μA V

MIN. NOM. MAX. MAX. TYP. MAX. MIN. MAX. MAX. MAX.

BZT03C6V2 5.8 6.2 6.6 100 1500 4.7 1 2 0 0.07 9.3 34 3000 5.1

BZT03C6V8 6.4 6.8 7.2 100 1000 5.1 1 2 0 0.07 10.2 31 2000 5.6

BZT03C7V5 7 7.5 7.9 100 750 5.6 1 2 0 0.07 11.3 26.5 1500 6.2

BZT03C8V2 7.7 8.2 8.7 100 600 6.2 1 2 0.03 0.08 12.3 24.4 1200 6.8

BZT03C9V1 8.5 9.1 9.6 50 20 6.8 2 4 0.03 0.08 13.3 22.7 50 7.5

BZT03C10 9.4 10 10.6 50 10 7.5 2 4 0.05 0.09 14.8 20.3 20 8.2

BZT03C11 10.4 11 11.6 50 4 8.2 4 7 0.05 0.1 15.7 19.1 5 9.1

BZT03C12 11.4 12 12.7 50 3 9.1 4 7 0.05 0.1 17 17.7 5 10

BZT03C13 12.4 13 14.1 50 2 10 5 10 0.05 0.1 18.9 15.9 5 11

BZT03C15 13.8 15 15.6 50 1 11 5 10 0.05 0.1 20.9 14.4 5 12

BZT03C16 15.3 16 17.1 25 1 12 6 15 0.06 0.11 22.9 13.1 5 13

BZT03C18 16.8 18 19.1 25 1 13 6 15 0.06 0.11 25.6 11.7 5 15

BZT03C20 18.8 20 21.2 25 1 15 6 15 0.06 0.11 28.4 10.6 5 16

BZT03C22 20.8 22 23.3 25 1 16 6 15 0.06 0.11 31 9.7 5 18

BZT03C24 22.8 24 25.6 25 1 18 7 15 0.06 0.11 33.8 8.9 5 20

BZT03C27 25.1 27 28.9 25 1 20 7 15 0.06 0.11 38.1 7.9 5 22

BZT03C30 28 30 32 25 1 22 8 15 0.06 0.11 42.2 7.1 5 24

BZT03C33 31 33 35 25 1 24 8 15 0.06 0.11 46.2 6.5 5 27

BZT03C36 34 36 38 10 1 27 21 40 0.06 0.11 50.1 6 5 30

BZT03C39 37 39 41 10 1 30 21 40 0.06 0.11 54.1 5.5 5 33

BZT03C43 40 43 46 10 1 33 24 45 0.07 0.12 60.7 4.9 5 36

BZT03C47 44 47 50 10 1 36 24 45 0.07 0.12 65.5 4.6 5 39

BZT03C51 48 51 54 10 1 39 25 60 0.07 0.12 70.8 4.2 5 43

BZT03C56 52 56 60 10 1 43 25 60 0.07 0.12 78.6 3.8 5 47

BZT03C62 58 62 66 10 1 47 25 80 0.08 0.13 86.5 3.5 5 51

BZT03C68 64 68 72 10 1 51 25 80 0.08 0.13 94.4 3.2 5 56

BZT03C75 70 75 79 10 1 56 30 100 0.08 0.13 103.5 2.9 5 62

BZT03C82 77 82 87 10 1 62 30 100 0.08 0.13 114 2.6 5 68

BZT03C91 85 91 96 5 1 68 60 200 0.09 0.13 126 2.4 5 75

BZT03C100 94 100 106 5 1 75 60 200 0.09 0.13 139 2.2 5 82

BZT03C110 104 110 116 5 1 82 80 250 0.09 0.13 152 2 5 91

BZT03C120 114 120 127 5 1 91 80 250 0.09 0.13 167 1.8 5 100

BZT03C130 124 130 141 5 1 100 110 300 0.09 0.13 185 1.6 5 110

BZT03C150 138 150 156 5 1 110 130 300 0.09 0.13 204 1.5 5 120

BZT03C160 153 160 171 5 1 120 150 350 0.09 0.13 224 1.3 5 130

BZT03C180 168 180 191 5 1 130 180 400 0.09 0.13 249 1.2 5 150

BZT03C200 188 200 212 5 1 150 200 500 0.09 0.13 276 1.1 5 160

BZT03C220 208 220 233 2 1 160 350 750 0.09 0.13 305 1 5 180

BZT03C240 228 240 256 2 1 180 400 850 0.09 0.13 336 0.9 5 200

BZT03C270 251 270 289 2 1 200 450 1000 0.09 0.13 380 0.8 5 220

BZT03C300 280 300 320 2 1 220 450 1000 0.09 0.13 419 0.72 5 240

VISHAY. DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogtevlshayxom www.v\shay.com/doc?91000

BZT03-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 3Document Number: 85599

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) 10/1000 exp. falling pulse tp = 1000 μs down to 50 %

(2) Stand-off voltage = recommended suplly voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART

NUMBER

ZENER VOLTAGE

RANGE

TEST

CURRENT

REVERSE

LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT CLAMPING (1) STAND

OFF (2)

VZ at IZT1 IZT1 IR at VRZZ at IZT1 TCVZ at IZT1 V(CL)R at IRMS IR at VR

VmA μA V%/K V A μA V

MIN. NOM. MAX. MAX. TYP. MAX. MIN. MAX. MAX. MAX.

BZT03D6V2 5.6 6.2 6.8 100 1500 4.4 1 2 0 0.07 9.5 34 3000 4.8

BZT03D6V8 6.1 6.8 7.5 100 1000 4.8 1 2 0 0.07 10.5 31 2000 5.3

BZT03D7V5 6.75 7.5 8.25 100 750 5.3 1 2 0 0.07 11.6 26.5 1500 5.9

BZT03D8V2 7.4 8.2 9 100 600 5.9 1 2 0.03 0.08 12.6 24.4 1200 6.5

BZT03D9V1 8.2 9.1 10 50 20 6.5 2 4 0.03 0.08 13.7 22.7 50 7.1

BZT03D10 9 10 11 50 10 7.1 2 4 0.05 0.09 15.2 20.3 20 7.9

BZT03D11 9.9 11 12.1 50 4 7.9 4 7 0.05 0.1 16.2 19.1 5 8.6

BZT03D12 10.8 12 13.2 50 3 8.6 4 7 0.05 0.1 17.5 17.7 5 9.3

BZT03D13 11.7 13 14.3 50 2 9.3 5 10 0.05 0.1 19.1 15.9 5 10.6

BZT03D15 13.5 15 16.5 50 1 10.6 5 10 0.05 0.1 21.8 14.4 5 11.6

BZT03D16 14.4 16 17.6 25 1 11.6 6 15 0.06 0.11 23.4 13.1 5 12.6

BZT03D18 16.2 18 19.8 25 1 12.6 6 15 0.06 0.11 26.3 11.7 5 14.4

BZT03D20 18 20 22 25 1 14.4 6 15 0.06 0.11 29.2 10.6 5 15.8

BZT03D22 29.8 22 24.2 25 1 15.8 6 15 0.06 0.11 31.9 9.7 5 17.2

BZT03D24 21.6 24 26.4 25 1 17.2 7 15 0.06 0.11 34.6 8.9 5 19.4

BZT03D27 24.3 27 29.7 25 1 19.4 7 15 0.06 0.11 39 7.9 5 21.5

BZT03D30 27 30 33 25 1 21.5 8 15 0.06 0.11 43.5 7.1 5 23.5

BZT03D33 29.7 33 36.3 25 1 23.5 8 15 0.06 0.11 47.5 6.5 5 25.8

BZT03D36 32.4 36 39.6 10 1 25.8 21 40 0.06 0.11 51.5 6 5 28

BZT03D39 35.1 39 42.9 10 1 28 21 40 0.06 0.11 56 5.5 5 31

BZT03D43 38.7 43 47.3 10 1 31 24 45 0.07 0.12 62 4.9 5 33.5

BZT03D47 42.3 47 51.7 10 1 33.5 24 45 0.07 0.12 67.5 4.6 5 36.5

BZT03D51 45.9 51 56.1 10 1 36.5 25 60 0.07 0.12 73 4.2 5 40

BZT03D56 50.4 56 61.6 10 1 40 25 60 0.07 0.12 81 3.8 5 44.5

BZT03D62 55.8 62 68.2 10 1 44.5 25 80 0.08 0.13 89 3.5 5 49

BZT03D68 61.2 68 74.8 10 1 49 25 80 0.08 0.13 97 3.2 5 54

BZT03D75 67.5 75 82.5 10 1 54 30 100 0.08 0.13 107 2.9 5 59

BZT03D82 73.8 82 90.2 10 1 59 30 100 0.08 0.13 117 2.6 5 65

BZT03D91 81.9 91 100 5 1 65 60 200 0.09 0.13 130 2.4 5 71

BZT03D100 90 100 110 5 1 71 60 200 0.09 0.13 143 2.2 5 79

BZT03D110 99 110 121 5 1 79 80 250 0.09 0.13 157 2 5 86

BZT03D120 108 120 132 5 1 86 80 250 0.09 0.13 172 1.8 5 93

BZT03D130 117 130 143 5 1 93 110 300 0.09 0.13 187 1.6 5 106

BZT03D150 135 150 165 5 1 106 130 300 0.09 0.13 213 1.5 5 116

BZT03D160 144 160 176 5 1 116 150 350 0.09 0.13 229 1.3 5 126

BZT03D180 162 180 198 5 1 126 180 400 0.09 0.13 256 1.2 5 144

BZT03D200 180 200 220 5 1 144 200 500 0.09 0.13 284 1.1 5 158

BZT03D220 198 220 242 2 1 158 350 750 0.09 0.13 314 1 5 172

BZT03D240 216 240 264 2 1 172 400 850 0.09 0.13 364 0.9 5 194

BZT03D270 243 270 297 2 1 194 450 1000 0.09 0.13 388 0.8 5 215

VISHAY. see ngA m Rev. 3 - Da|e 09 February 2005 Dacumem nu 5.5536006 34 DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000

BZT03-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 4Document Number: 85599

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Epoxy Glass Hard Tissue, Board Thickness 1.5 mm,

RthJA  100 K/W

Fig. 2 - Total Power Dissipation vs. Ambient Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Non Repetitive Surge Power Dissipation vs.

Pulse Length

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

50 3

94 9086a

94 9584

40 80 120 160

P –Total Power Dissipation ( W)

tot

Tamb–Ambient Temperature ( °C )

200

TL=constant

l=10mm

see Fig.1

15mm

20mm

0 0.5 1.0 1.5

0.5

1.0

1.5

2.0

3.0

2.0

94 9585

I–Forward Current (A )

–Forward Voltage ( V)

2.5

=25°C

0.01 0.1 1 10

100

1000

10000

P–Non-RepetitiveSurge Power

ZSM

–Pulse Length ( ms )

100

94 9586

Dissipation (W)

=25°C

20543

3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

0.82 (0.032) max.

— VISHAY. V

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Revision: 08-Feb-17 1Document Number: 91000

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