SI2342DS-T1-GE3 Datasheet by Vishay Siliconix

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VISHAY. ® RoHS Cowmm mom ms: / om/do 99912 \ , / Tuprew pmosmcnsuggonviwshaymm www.v\shay,com/doc?91000
Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 1Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 8 V (D-S) MOSFET
Marking code: F2
FEATURES
• TrenchFET® power MOSFET
Low on-resistance
100 % Rg tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Load switches for low voltage gate drive
Low voltage operating circuits
- Gate drive 1.2 V to 5 V
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
e. Package limited
PRODUCT SUMMARY
VDS (V) 8
RDS(on) max. () at VGS = 4.5 V 0.017
RDS(on) max. () at VGS = 2.5 V 0.020
RDS(on) max. () at VGS = 1.8 V 0.022
RDS(on) max. () at VGS = 1.5 V 0.030
RDS(on) max. () at VGS = 1.2 V 0.075
Qg typ. (nC) 6
ID (A) a, e 6
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G1
D3
S2
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and halogen-free Si2342DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 8V
Gate-source voltage VGS ± 5
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
6 e
A
TC = 70 °C 6 e
TA = 25 °C 6 b, c, e
TA = 70 °C 5.8 b, c
Pulsed drain current (t = 300 μs) IDM 30
Continuous source-drain diode current TC = 25 °C IS
2.1
TA = 25 °C 1.1 b, c
Maximum power dissipation
TC = 25 °C
PD
2.5
W
TC = 70 °C 1.6
TA = 25 °C 1.3 b, c
TA = 70 °C 0.8 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 5 s RthJA 75 100 °C/W
Maximum junction-to-foot (drain) Steady state RthJF 40 50
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Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 2Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 8 - - V
VDS temperature coefficient VDS/TJID = 250 μA -10-
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--2.5-
Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 0.35 - 0.8 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 5 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 8 V, VGS = 0 V - - 1 μA
VDS = 8 V, VGS = 0 V, TJ = 70 °C - - 10
On-state drain current a ID(on) V
DS 5 V, VGS = 4.5 V 20 - - A
Drain-source on-state resistance a RDS(on)
VGS = 4.5 V, ID = 7.2 A - 0.014 0.017
VGS = 2.5 V, ID = 6.7 A - 0.016 0.020
VGS = 1.8 V, ID = 6.4 A - 0.018 0.022
VGS = 1.5 V, ID = 5.5 A - 0.020 0.030
VGS = 1.2 V, ID = 1.3 A - 0.025 0.075
Forward transconductance agfs VDS = 4 V, ID = 7.2 A - 75 - S
Dynamic b
Input capacitance Ciss
VDS = 4 V, VGS = 0 V, f = 1 MHz
- 1070 -
pFOutput capacitance Coss - 385 -
Reverse transfer capacitance Crss - 200 -
Total gate charge Qg VDS = 4 V, VGS = 4.5 V, ID = 7.2 A - 10.5 15.8
nC
VDS = 4 V, VGS = 2.5 V, ID = 7.2 A
-69
Gate-source charge Qgs -1.6-
Gate-drain charge Qgd -1-
Gate resistance Rgf = 1 MHz 2.4 12 24
Turn-on delay time td(on)
VDD = 4 V, RL = 0.7 ,
ID 5.8 A, VGEN = 4.5 V, Rg = 1
-612
ns
Rise time tr -1420
Turn-off delay time td(off) -6598
Fall time tf-2538
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 2.1 A
Pulse diode forward current ISM --30
Body diode voltage VSD IS = 5.8 A, VGS = 0 - 0.82 1.2 V
Body diode reverse recovery time trr
IF = 5.8 A, di/dt = 100 A/μs,
TJ = 25 °C
-4060ns
Body diode reverse recovery charge Qrr -1726nC
Reverse recovery fall time ta -15-ns
Reverse recovery rise time tb-25-
M (“>7 J — V VISHAY.
Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 3Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
6
12
18
24
30
00.511.52
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 1.5 V
VGS = 5 V thru 2 V
VGS = 1 V
0.010
0.016
0.022
0.028
0.034
0.040
0 6 12 18 24 30
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS = 2.5 V
VGS = 1.5 V
V
GS
= 4.5 V
VGS = 1.8 V
VGS = 1.2 V
0
0.9
1.8
2.7
3.6
4.5
036912
VGS -Gate-to-Source Voltage (V)
Qg-Total Gate Charge (nC)
VDS= 6.4 V
VDS= 4 V
VDS= 2 V
I
D
= 7.2 A
0
1
2
3
4
5
0 0.3 0.6 0.9 1.2
I
D
- Drain Current (A)
V
GS
-Gate-to-Source Voltage (V)
T
C
= 25 °C
T
= 125 °CT
C
= - 55 °C
0
300
600
900
1200
1500
02468
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.7
0.9
1.1
1.3
-50-250 255075100125150
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
I
D
= 7.2 A
V
GS
= 4.5 V
VGS = 2.5 V
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Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 4Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
-Source Current (A)
V
SD
-Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.1
0.25
0.4
0.55
0.7
-50-250 255075100125150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0.01
0.015
0.02
0.025
0.03
12345
R
DS(on)
-On-Resistance (Ω)
V
GS
-Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
=7.2 A
0
2
4
6
8
10
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
TA= 25 °C
0.01
0.1
1
10
100
0.1 1 10
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100 ms
Limited by RDS(on)*
1 ms
TC= 25 °C
Single PulseBVDSS Limited
10 ms
100 μs
10 s, 1 s
DC
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Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 5Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
0
3
6
9
12
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
-Case Temperature (°C)
Package Limited
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power (W)
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power (W)
VISHAY. www vrshay.cum/ggg963302 pmosmcnsuggomiwshamam www.v\shay,com/doc?91000
Si2342DS
www.vishay.com Vishay Siliconix
S11-1388-Rev. A, 11-Jul-11 6Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking,
and reliability data, see www.vishay.com/ppg?63302.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10-3 10-2 10110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D' 'SHa) com 25 Hex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
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Revision: 01-Jan-2021 1Document Number: 91000
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