STGWA50IH65DF Trench Gate Field-Stop

STMicroelectronics' soft switching 650 V IGBTs are optimized both in conduction and switching losses

Image of STMicroelectronics STGWA50IH65DF Trench Gate Field-StopSTMicroelectronics' IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft-commutation. A freewheeling diode with a low-drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

Features
  • Designed for soft-commutation only
  • Maximum junction temperature: TJ = 175 °C
  • VCE(sat) = 1.5 V (typ.) at IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Low voltage drop, freewheeling co-packaged

STGWA50IH65DF Trench Gate Field-Stop

ImageRéférence fabricantDescriptionQuantité disponibleAfficher les détails
TRENCH GATE FIELD-STOP IGBT 650STGWA50IH65DFTRENCH GATE FIELD-STOP IGBT 65076 - ImmédiatementAfficher les détails
Date de publication : 2019-03-14