MAT01 Datasheet by Analog Devices Inc.

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ANALOG atched Monolithic DEVICES Dual Transistor MATOI
Matched Monolithic
Dual Transistor
Data Sheet
MAT01
FEATURES
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers
PIN CONNECTION DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
silicon nitride triple passivation process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV,
temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.
High hFE is provided over a six decade range of collector
current, including an exceptional hFE of 590 at a collector
current of only 10 nA. The high gain at low collector current
makes the MAT01 ideal for use in low power, low level input
stages.
C
1
MAT01
TOP VIEW
(Not to Scale)
E
1
B
1
NOTES
1. SUBSTRATE IS CONNECTED TO CASE.
C
2
E
2
00282-001
B
2
1
3
6
4
2 5
Rev. D Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©19732014 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
MAT01 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Pin Connection Diagram ................................................................ 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
Absolute Maximum Ratings ............................................................ 5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Test Circuits ........................................................................................8
Applications Information .................................................................9
Typical Applications ....................................................................... 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
9/14Rev. C to Rev. D
Changes to Figure 4 and Figure 7 ................................................... 6
4/13Rev. B to Rev. C
Updated Format .................................................................. Universal
Added Applications Section, Deleted Figure 2,
Renumbered Sequentially ................................................................ 1
Deleted Table 3, Renumbered Sequentially................................... 4
Changes to Table 3 ............................................................................ 5
Changes to Typical Performance Characteristics Section ........... 6
Updated Outline Dimensions ....................................................... 11
Changes to Ordering Guide .......................................................... 11
2/02—Rev. A to Rev. B
Edits to Features................................................................................. 1
Deleted Wafer Test Limits ................................................................ 3
Deleted DICE Characteristics .......................................................... 3
Edits to Table 5 ................................................................................... 7
Rev. D | Page 2 of 12
Table L
Data Sheet MAT01
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VCB = 15 V, IC = 10 µA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments
MAT01AH MAT01GH
Unit Min Typ Max Min Typ Min
VOLTAGE
Breakdown Voltage BVCEO IC = 100 µA 45 45 V
Offset Voltage VOS 0.04 0.1 0.10 0.5 mV
Offset Voltage Stability
First Month1 VOS/Time 2.0 2.0 µV/Mo
Long Term2 0.2 0.2 µV/Mo
CURRENT
Offset Current IOS 0.1 0.6 0.2 3.2 nA
Bias Current IB 13 20 18 40 nA
Current Gain hFE IC = 10 nA 590 430
IC = 10 µA 500 770 250 560
I
C
= 10 mA
840
610
Current Gain Match
∆h
FE
I
C
= 10 µA
0.7
1.0
8.0
%
100 nA ≤ IC ≤ 10 mA 0.8 1.2 %
NOISE
Low Frequency Noise Voltage en p-p 0.1 Hz to 10 Hz3 0.23 0.4 0.23 0.4 µV p-p
Broadband Noise Voltage en rms 1 Hz to 10 kHz 0.60 0.60 µV rms
Noise Voltage Density en fO = 10 Hz3 7.0 9.0 7.0 9.0 nV/√Hz
fO = 100 Hz3 6.1 7.6 6.1 7.6 nV/√Hz
fO = 1000 Hz3 6.0 7.5 6.0 7.5 nV/√Hz
OFFSET VOLTAGE/CURRENT
Offset Voltage Change ∆VOS/∆VCB 0 ≤ VCB 30 V 0.5 3.0 0.8 8.0 µV/V
Offset Current Change ∆IOS/∆VCB 0 ≤ VCB 30 V 2 15 3 70 pA/V
LEAKAGE
Collector to Base Leakage Current ICBO VCB = 30 V, IE = 04 15 50 25 200 pA
Collector to Emitter Leakage Current ICES VCE = 30 V, VBE = 04, 5 50 200 90 400 pA
Collector to Collector Leakage Current ICC VCC = 30 V5 20 200 30 400 pA
SATURATION
Collector Saturation Voltage VCE(SAT) IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V
I
B
= 1 mA, I
C
= 10 mA
0.8
0.8
V
GAIN BANDWIDTH PRODUCT fT VCE = 10 V, IC = 10 mA 450 450 MHz
CAPACITANCE
Output Capacitance COB VCB = 15 V, IE = 0 2.8 2.8 pF
Collector to Collector Capacitance CCC VCC = 0 8.5 8.5 pF
1 Exclude first hour of operation to allow for stabilization.
2 Parameter describes long-term average drift after first month of operation.
3 Sample tested.
4 The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
5 ICC and ICES are guaranteed by measurement of ICBO.
Rev. D | Page 3 of 12
MAT01 Data Sheet
VCB = 15 V, IC = 10 µA, −55°C TA ≤ +125°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments
MAT01AH MAT01GH
Unit Min Typ Max Min Typ Min
OFFSET VOLTAGE/CURRENT
Offset Voltage
V
OS
0.06
0.14
0.70
mV
Average Offset Voltage Drift1 TCVOS 0.15 0.50 0.35 1.8 µV/°C
Offset Current IOS 0.9 8.0 1.5 15.0 nA
Average Offset Current Drift2 TCIOS 10 90 15 150 pA/°C
BIAS CURRENT ΙΒ 28 60 36 130 nA
CURRENT GAIN hFE 167 400 77 300
LEAKAGE CURRENT
Collector to Base Leakage Current ICBO TA = 125°C, VCB = 30 V, IE = 03 15 80 25 200 nA
Collector to Emitter Leakage Current ICES TA = 125°C, VCE = 30 V, VBE = 01, 3 50 300 90 400 nA
Collector to Collector Leakage Current ICC TA = 125°C, VCC = 30 V1 30 200 50 400 nA
1 Guaranteed by VOS test
( )
for BE
V
OS
V
T
OS
V
OS
TCV <<
, T = 298 K for TA = 25°C.
2 Guaranteed by IOS test limits over temperature.
3 The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
Rev. D | Page 4 of 12
m ESD (electros‘atk discharge) sensifive device, Charged deers and (mm boavds (an dwsflvarge wnham aexeenon Nmough KhIS pmduu Veamves palemed or pvupvwe‘avy pvotemon clvcwtvy, damage my new on dewes summed m hrgh energy ESD Therefove, pmper {so pvecaunons shomd be (aken (o avoid pevfmmance degradancn m ‘05: of fundlonahty
Data Sheet MAT01
Rev. D | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter1 Rating
Breakdown Voltage of
Collector to Base Voltage (BVCBO) 45 V
Collector to Emitter Voltage (BVCEO) 45 V
Collector to Collector Voltage (BVCC) 45 V
Emitter to Emitter Voltage (BVEE) 45 V
Emitter to Base Voltage (BVEBO)2 5 V
Current
Collector (IC) 25 mA
Emitter (IE) 25 mA
Total Power Dissipation
Case Temperature ≤ 40°C3 1.8 W
Ambient Temperature ≤ 70°C4 500 mW
Temperature Range
Operating −55°C to +125°C
Junction −55°C to +150°C
Storage −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
1 Absolute maximum ratings apply to packaged devices.
2 Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to
measure BVEBO greater than the 5 V rating.
3 Rating applies to applications using heat sinking to control case
temperature. Derate linearity at 16.4 mW/°C for case temperatures above
40°C.
4 Rating applies to applications not using heat sinking; device in free air only.
Derate linearity at 6.3 mW/°C for ambient temperatures above 70°C.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
muss vonAGE nENsmr ("V/\Hx) / // .// .Ifl/ mum \ muss cuRREm nENsmr (pa/m1) MAYmA/ =\ \ Ic = um nsr ens: I: : :mawx rchL I5 = um TYPICAL
MAT01 Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. Offset Voltage vs. Temperature
Figure 3. Current Gain vs. Collector Current
Figure 4. Noise Voltage Density vs. Frequency
Figure 5. Offset Voltage vs. Time
Figure 6. Current Gain vs. Temperature
Figure 7. Noise Current Density vs. Frequency
200
150
100
50
0–25 25 75 125100
–75 050 150
00282-002
OFFSET VOLTAGE (µV)
TEMPERATURE (°C)
OV < V
CB
< 30V
MAT01G
MAT01A
1000
800
600
200
01n 100n 10µ 1m 100m10n 100µ 10m
00282-003
CURRENT GAIN (
h
FE
)
COLLECTOR CURRENT (A)
400
T
A
= 25°C
V
CB
= 15V
MAT01A
MAT01G
1000
100
10
1
0.1 10 10k
1100 10k
00282-004
NOISE VOLTAGE DENSITY (nV/√Hz)
FREQUENCY (Hz)
TA = 25°C
IC = 10µA WORST CASE
IC = 10µA TYPICAL
IC = 300µA TYPICAL
10
4
–2
–8
–10 1 4 8 12100 2 6 13
00282-005
ABSOLUTE CHANGE IN OFFSET VOLTAGE (µV)
TIME (Months)
6
0
–6
8
2
–4
37119
5
DEVICE A
DEVICE B
DEVICE C
DEVICE D
1000
800
600
400
200 –50 025 75 125100–75 –25 50
00282-006
CURRENT GAIN (h
fe
)
TEMPERATURE (°C)
OV < V
CB
< 30V
(EXCLUDES I
CBO
)
100nA < I
C
< 25mA
MAT01G
MAT01A
100
10
1
0.1
0.1 10 1k1100 10k
00282-007
NOISE CURRENT DENSITY (pA/Hz)
FREQUENCY (Hz)
TA = 25°C
IC = 10µA
WORST CASE
IC = 10µA TYPICAL
IC = 300µA TYPICAL
Rev. D | Page 6 of 12
Data Sheet MAT01
Figure 8. Collector Current vs. Base to Emitter Voltage
Figure 9. Saturation Voltage vs. Collector Current
Figure 10. Unity-Gain Bandwidth vs. Collector Current
10mA
1µA
10nA
100pA
10µA
100µA
1mA
100nA
1nA
10pA 100 300 500 7006000200 400 800
00282-008
COLLECTOR CURRENT (I
C
)
BASE TO EMITTER VOLTAGE (mV)
Δ < 0.3mV
Δ < 0.1mV
Δ ≈ DEVIATION FROM
STRAIGHT LINE
Δ < 0.3mV
MAT01
T
A
= 25°C
100
10
1
0.1
0.01
0.01 11000.1 10
00282-009
SATURATION VOLTAGE (V)
COLLECTOR CURRENT (mA)
T
A
= +25°C
T
A
= +125°C
T
A
= –55°C
I
C
= 10 × I
B
MAT01
1000
100
200
500
10
20
50
1
2
5
1µA 100µA 10mA10µA 1mA 100mA
00282-010
UNITY-GAIN BANDWIDTH PRODUCT (MHz)
COLLECTOR CURRENT (I
C
)
T
A
= 25°C
V
CE
= 10V
MAT01
Rev. D | Page 7 of 12
MAT01 Data Sheet
TEST CIRCUITS
Figure 11. Matching Measurement Circuit
Figure 12. Noise Measurement Circuit
+16.5V
50kΩ*
50kΩ*
TEST UNITS
20kΩ
OP1177
100kΩ
1%
1MΩ 1MΩ*
100kΩ
1%
–15V
V
OUT
S1
B
S1
A
S1
A
S1
B
V
OS
V
OUT1
CLOSED CLOSED
I
OS
V
OUT2
– V
OUT1
1V PER mV
1V PER nAOPEN OPEN
100pF
MAT01
100pF
50kΩ*
V–
20µA
*MATCHED TO 0.01%
+16.5V
00282-011
+15V
50kΩ*
50kΩ*
TEST
V
01
/√2
2.5M
4kΩ
V
02
3.3kΩ
LOW
FREQUENCY
NOISE
NOISE
DENSITY
4MΩ 4MΩ
100Ω
4.7µF
–15V
+15V
S1
B
S2
S3 B
A
S1
A
S1
A
S1
B
V
01
/(√2 × 4MΩ)
OPEN OPEN CLOSED A
NOISE VOLTAGE DENSITY
(PER TRANSISTOR)
NOISE CURRENT DENSITY
(PER TRANSISTOR)
LOW FREQUENCY NOISE
(REFERRED TO INPUT)
CLOSED CLOSED CLOSED A
OPEN B V
02
PEAK-TO-PEAK
25,000
CLOSED CLOSED
2pF
MAT01
2pF
50kΩ*
–15V
20µA720kΩ
*MATCHED TO 0.01%
S2 S3** READING
00282-012
V
01
SPECTRUM
ANALYZER
OR
QUAN-TECH
IC NOISE
ANALYZER
2181/2283
**AAND B REFER TO THE THROW POSITION OF THE SWITCH
Rev. D | Page 8 of 12
Data Sheet MAT01
APPLICATIONS INFORMATION
Application of reverse bias voltages to the emitter to base junctions
in excess of ratings (5 V) may result in degradation of hFE and
hFE matching characteristics. Check circuit designs to ensure
that reverse bias voltages above 5 V cannot be applied during
transient conditions, such as at circuit turn-on and turn-off.
Stray thermoelectric voltages generated by dissimilar metals at
the contacts to the input terminals can prevent realization of the
predicted drift performance. Maintain both input terminals at
the same temperature, preferably close to the temperature of the
device package.
Rev. D | Page 9 of 12
MAT01 Data Sheet
TYPICAL APPLICATIONS
Figure 13. Precision Reference
Figure 14. Basic Digital Thermometer Readout in Degrees Kelvin (K)
Figure 15. Digital Thermometer with Readout in °C
R1
1.5kΩ
1mA
V
REF
V
REF
≈ 7.0V
TCV
REF
≈ 100ppm/°C
R
O
40Ω
NOTES
1. R1 MAY BE ADJUSTED TO MINIMIZE TCV
REF
.
INCREASING R1 CAUSES A POSITIVE CHANGE IN TCV
REF.
2. h
FE
OF Q1 IS REDUCED BY OPERATION OF BREAKDOWN MODE.
Q1
Q2
00282-013
SENSING PAIR
MAT01H
°C K EO
–55°C = 218K = 2.18V
+25°C = 298K = 2.98V
+125°C = 398K = 3.98V
DIFFERENTIAL
AMPLIFIER AND
CURRENT SOURCES
EO = 10mV/K
3-DIGIT DPM
0V TO +10V
FULL SCALE
UP TO
100 FEET
CABLE +15V –15V
00282-014
SENSING PAIR
MAT01H
–55°C = –0.55V
+25°C = +0.25V
+125°C = +1.25V
DIFFERENTIAL
AMPLIFIER AND
CURRENT SOURCES
E
O
= 10mV/K
METER DISPLAYS
E
O
–2.73V
HIGH 2 1/2 DIGIT
DPM BIPOLAR
DIFFERENTIAL
INPUTS
LOW
UP TO
100FT.
CABLE +15V –15V
2.73V
POWER SUPPLY +
00282-015
Rev. D | Page 10 of 12
Data Sheet MAT01
Rev. D | Page 11 of 12
OUTLINE DIMENSIONS
Figure 16. 6-Pin Metal Header Package [TO-78]
(H-06)
Dimensions shown in inches and (millimeters)
ORDERING GUIDE
Model1 V
OS Maximum (TA = 25°C) Temperature Range Package Description Package Option
MAT01AH 0.1 mV −55°C to +125°C 6-Pin Metal Header Package [TO-78] H-06
MAT01AHZ 0.1 mV −55°C to +125°C 6-Pin Metal Header Package [TO-78] H-06
MAT01GH 0.5 mV −55°C to +125°C 6-Pin Metal Header Package [TO-78] H-06
MAT01GHZ 0.5 mV −55°C to +125°C 6-Pin Metal Header Package [TO-78] H-06
1 Z = RoHS Compliant Part.
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
0.250 (6.35) MIN
0.750 (19.05)
0.500 (12.70)
0.185 (4.70)
0.165 (4.19)
REFERENCE PLANE
0.050 (1.27) MAX
0.019 (0.48)
0.016 (0.41)
0.021 (0.53)
0.016 (0.41)
0.045 (1.14)
0.010 (0.25)
0.040 (1.02) MAX
BASE & SEATING PLANE
0.335 (8.51)
0.305 (7.75)
0.370 (9.40)
0.335 (8.51)
0.034 (0.86)
0.027 (0.69)
0.160 (4.06)
0.110 (2.79)
0.100 (2.54) BSC
5
2
6
4
3
1
0.200
(5.08)
BSC
0.100
(2.54)
BSC
45°
BSC
0.045 (1.14)
0.027 (0.69)
022306-A
ANALOG DEVICES www.analuu.com
MAT01 Data Sheet
Rev. D | Page 12 of 12
NOTES
©1973–2014 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D00282-0-9/14(D)

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