EM6K1 Datasheet by Rohm Semiconductor

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EM6K1
Transistor
Rev.C 1/3
2.5V Drive
Nch+Nch
MOS FET
EM6K1
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
zApplications
zExternal dimensions (Unit : mm)
Each lead has same dimensions
EMT6
0.22
1.2
1.6
(1)(2)
(5)
(3)
(6)(4)
0.13
0.5
0.5
0.5
1.0
1.6
1pin mark
Abbreviated symbol : K1
Interfacing, switching (30V, 100mA)
zPackaging specifications zEquivalent circuit
Taping
EM6K1
Type
T2R
8000
Package
Basic ordering unit
(pieces)
Code
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
V
V
mA
mW / TOTAL
°C
mA
°C
VDSS
VGSS
PD
Tch
ID
IDP
Tstg
Symbol
30
±20
±100
±400
150
mW / ELEMENT120
150
55 to +150
Limits Unit
1 Pw10µs, Duty cycle1%
2 With each pin mounted on the recommended lands.
Drainsource voltage
Gatesource voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed 1
2
(1)
Gate
Protection
Diode
Tr1
Tr2
Gate
Protection
Diode
A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1)Tr1 Sourc
e
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Sourc
e
(5)Tr2 Gate
(6)Tr1 Drain
(2) (3)
(4)(5)(6)
0mm CURRENY Mm sum umw saunas ‘ 2 a a 5 DRAW souacs vomss MA» MA Typwca‘ Output Charactensucs 2n m ON STATE nEswsTANDE mm m .a'z «m . «n: .w n DRAW cunnsm Mm 99.4 smuc DramsSource Ouss‘a‘e Reslsmnce vs. Dram Cunem (1) 0mm CURRENY Mm mm mm souacs ‘ 2 a a was souacs vomss mm Fig 2 Typma‘ Tvansfev Chavaclensucs ON sws asswmucs Rmamm . .m an as ru 01 s DRAW cuwsm Mm H95 Slam Dramgouvce enema Heswslance vs Dram Cunem (m ans wassuam vamss VGSI‘ ON STATE nEswsTANDE msmuu smm DRAW sown; 25 a 25 an 7; mm ‘25 ‘5 CHANNEL rswswnuas m m mu m 5 m ‘5 20 ans saunas vumss mam Rev.C 2/3
EM6K1
Transistor
Rev.C 2/3
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
Ciss
Y
fs
Coss
Crss
Min.
30
0.8
20
5
13
9
4
±1
1.0
1.5
8
713
µAV
GS
=
±20V, V
DS
=
0V
I
D
=
10µA, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
DS
=
3V, I
D
=
10mA
V
DS
=
3V, I
D
=
100µA
I
D
=
10mA, V
GS
=
4V
I
D
=
1mA, V
GS
=
2.5V
V
DS
=
5V
V
GS
=
0V
f
=
1MHz
V
µA
V
pF
mS
pF
pF
t
d(on)
15 I
D
=
10mA, V
DD
5V
ns
t
r
35 V
GS
=
5V
ns
t
d(off)
80 R
L
=
500
ns
t
f
80 R
G
=
10
ns
Typ. Max. Unit Conditions
Gatesource leakage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turnon delay time
Turnoff delay time
Rise time
Fall time
Drainsource breakdown voltage
Static drainsource onstarte
resistance
Zero gate voltage drain current
zElectrical characteristic curves
01 2 34
5
0
0.05
0.1
0.15
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=1.5V
4V
2V
Fig.1 Typical Output Characteristic
s
04
0.1m
100m
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
V
DS
=3V
Pulsed
Ta=125°C
75°C
25°C
25°C
Fig.2 Typical Transfer Characteristic
s
50 0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : V
GS
(th) (V
)
CHANNEL TEMPERATURE : Tch (°C)
0.5
25 25 50 75 100 125 15
0
V
DS
=3V
I
D
=0.1mA
Fig.3 Gate Threshold Voltage vs
.
Channel Temperature
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) ()
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.
5
5
10
20
V
GS
=4V
Pulsed
Ta=125
°C
75
°C
25
°C
25
°C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (Ι
)
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) ()
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.
5
5
10
20
V
GS
=2.5V
Pulsed
Ta=125°C
75°C
25°C
25°C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ
)
0 5 10 15 2
0
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(
V)
I
D
=0.1A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) ()
Ta=25
°C
Pulsed
I
D
=0.05A
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
53 8E 3% am a: :h sz (/10 u an 25 a 25 so 75 mu ‘2; ‘50 CHANNEL Tzwmmnz m 1°C! Hg 7 Statm Dramrsuume OH'State Reswstance VS Channe‘ Temperamve 5mm 2 Sam 3 NM 5 mm D a g 2m 5 w gm Mm m c as ‘ souRcE DRAW mamas VSDM H910 Reverse Dram Current vs, SouvceVDram Vunage (1:) W1 3—1 \ FORWARD TRANSFER cARAcRANcE c rpm 9‘ VANCE ADM 1 man a 2 g Sfln Zfln a as m" a 02 5" am REE DRAW CURRENV ; :05 a :42 Lam m , *5 a as ‘ ‘ souRcE DRAW mamas VSDM DRAW CURRENT m m H98 Fovwavd Transver Admmance vs. Dram Currem 2mm swaHWG mg | 2 SD n a- c2 DRAW SOURCE VOLTAGE vnswr ns‘z smzn c2 (5‘ 2 s uRmN cuRREm mum ‘c 2c 5n ‘c Typmax Capacuance vs. Dyawgoume Vouage Rev.C 3/
EM6K1
Transistor
Rev.C 3/3
50 0 25 15
0
0
3
6
9
CHANNEL TEMPERATURE : Tch (
°C)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) ()
25 50 75 100 125
2
1
4
5
7
8
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=50mA
Fig.7 Static Drain-Source On-Sta
te
Resistance vs.
Channel Temperature
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE : Yfs (S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
0.05
0.1
0.2
0.1 0.2 0
.5
0.002
V
DS
=3V
Pulsed
Ta=25°C
75°C
25°C
125°C
Fig.8 Forward Transfer Admittanc
e
vs. Drain Current
200m
REVERCE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1
.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
25°C
Fig.9 Reverse Drain Current vs
.
Source-Drain Voltage (Ι)
200m
REVERCE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1
.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25°C
Pulsed
V
GS
=4V 0V
Fig.10 Reverse Drain Current vs
.
Source-Drain Voltage (ΙΙ
)
0.1
1
2
50
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS (V)
0.5
0.2 0.5 1 2 5 10 20 5
0
5
10
20
C
iss
C
oss
C
rss
Ta=25°C
f=1MH
Z
V
GS
=0V
Pulsed
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
0.1
10
20
500
SWITHING TIME : t (ns)
DRAIN CURRENT : ID (mA)
5
0.2 0.5 1 2 5 10 20 50
50
100
200
1000
210
0
Ta=25°C
VDD=5V
VGS=5V
RG=10
td(off)
tr
td(on)
tf
Fig.12 Switching Characteristics
zSwitching characteristics measurement circuits
Fig.13 Switching Time Test Circuit
VGS
RG
VD
D.U.T.
ID
RL
VDD
90% 50%
10%
90%
10%
50%
Pulse Width
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Time Waveforms
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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