PTM Library

Increase Your Knowledge of the Latest Products and Technologies.
917-1027-2-ND eGaN® FET Reliability Updated: 2016-03-30

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

Duration: 5 minutes
EPC
eGaN-based Eighth Brick Converter eGaN-based Eighth Brick Converter Publish Date: 2015-08-24

Review of the design specifications of a 500 W 1/8th brick converter

Duration: 5 minutes
EPC
917-EPC2100ENG-ND eGaN Integrated GaN Power Publish Date: 2015-06-19

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.

Duration: 5 minutes
EPC
eGaN FETS Driving eGaN FETs with the LM5113 Publish Date: 2012-10-16

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Duration: 15 minutes
Paralleling eGaN FETs Paralleling eGaN® FETs Publish Date: 2012-04-26

Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.

Duration: 10 minutes
EPC
2nd Gen eGaN FETs Second Gen Lead Free eGaN® FETs Overview Publish Date: 2011-10-28

The new-generation is lead free and halogen free and has improved electrical performance.

Duration: 5 minutes
EPC
eGan Power Transistors Driving eGaN® Power Transistors Publish Date: 2010-10-11

EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.

Duration: 5 minutes
EPC
eGaN FET's Characteristics eGan® FET's Characteristics Publish Date: 2010-10-06

The operation of EPC’s enhancement mode gallium nitride transistors.

Duration: 5 minutes
EPC
eGaN Basics eGaN® Basics Publish Date: 2010-09-27

The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.

Duration: 10 minutes
EPC
eGaN FETs for DC-DC Conversion eGan® FETs for DC-DC Conversion Publish Date: 2010-01-22

eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.

Duration: 5 minutes
EPC