Single FETs, MOSFETs

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of 16

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TP65H150BG4JSG-TR GANFET N-CH 650V 13A QFN5X6 Transphorm	2 547 In Stock	1 : 4,65000 € Cut Tape (CT) 4 000 : 1,70644 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	16A (Tc)	6V	180mOhm @ 10A, 6V	2.8V @ 500µA	4.9 nC @ 10 V	±10V	400 pF @ 400 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
TP65H100G4PS Hi Volt FETs Transphorm	242 In Stock	1 : 7,25000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	18.9A (Tc)	10V	110mOhm @ 12A, 10V	4.1V @ 1.8mA	14.4 nC @ 10 V	±20V	818 pF @ 400 V	-	65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H150G4PS GAN FET N-CH 650V TO-220 Transphorm	2 575 In Stock	1 : 7,40000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	16A (Tc)	10V	180mOhm @ 8.5A, 10V	4.8V @ 500µA	8 nC @ 10 V	±20V	598 pF @ 400 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H070G4PS GANFET N-CH 650V 29A TO220 Transphorm	491 In Stock	1 : 9,07000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 18A, 10V	4.7V @ 700µA	9 nC @ 10 V	±20V	638 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H070G4RS-TR 650 V 29 A GAN FET Transphorm	1 725 In Stock	1 : 9,22000 € Cut Tape (CT) 2 000 : 4,24304 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 18A, 10V	4.8V @ 700µA	9 nC @ 10 V	±20V	638 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLT	16-PowerSOP Module
TP65H070G4LSG-TR GANFET N-CH 650V 29A QFN8X8 Transphorm	2 514 In Stock	1 : 9,82000 € Cut Tape (CT) 3 000 : 4,61200 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	8.4 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerTDFN
TP65H070G4LSGB-TR GANFET N-CH 650V 29A QFN8X8 Transphorm	2 582 In Stock	1 : 10,74000 € Cut Tape (CT) 3 000 : 5,17697 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 16A, 10V	4.6V @ 700µA	8.4 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (8x8)	8-PowerTDFN
TP65H050G4BS 650 V 34 A GAN FET Transphorm	554 In Stock	1 : 13,26000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TP65H050G4WS 650 V 34 A GAN FET Transphorm	428 In Stock	1 : 14,73000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H035G4QS 650 V 46.5 A GAN FET HIGH VOLTAG Transphorm	1 705 In Stock	1 : 17,26000 € Cut Tape (CT) 2 000 : 9,56990 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
TP65H480G4JSGB-TR GANFET N-CH 650V 3.6A QFN5X6 Transphorm	3 876 In Stock	1 : 3,42000 € Cut Tape (CT) 4 000 : 1,12994 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	3.6A (Tc)	6V	560mOhm @ 3A, 6V	2.8V @ 500µA	5 nC @ 10 V	±10V	414 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
TP65H300G4LSGB-TR GANFET N-CH 650V 6.5A QFN8X8 Transphorm	2 838 In Stock	1 : 3,86000 € Cut Tape (CT) 3 000 : 1,32595 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	6.5A (Tc)	6V	312mOhm @ 6.5A, 6V	2.8V @ 500µA	8.8 nC @ 10 V	±12V	730 pF @ 400 V	-	21W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (8x8)	8-VDFN Exposed Pad
TP65H300G4JSGB-TR GANFET N-CH 650V 9.2A QFN5X6 Transphorm	3 890 In Stock	1 : 3,98000 € Cut Tape (CT) 4 000 : 1,38360 € Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	9.2A (Tc)	6V	312mOhm @ 6.5A, 6V	2.8V @ 500µA	3.5 nC @ 10 V	±10V	400 pF @ 400 V	-	41.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
TP65H050G4YS 650 V 35 A GAN FET HIGH VOLTAGE Transphorm	333 In Stock	1 : 14,73000 € Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	35A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	132W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
TP65H100G4LSGB-TR Hi Volt FETs Transphorm	2 950 In Stock	Active	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	18.9A (Tc)	10V	110mOhm @ 12A, 10V	4.1V @ 1.8mA	14.4 nC @ 10 V	±20V	818 pF @ 400 V	-	65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (8x8)	8-VDFN Exposed Pad
TP65H480G4JSG MOSFET 650V, 480mOhm Transphorm	0 In Stock Check Lead Time	4 000 : 1,27983 € Bulk	SuperGaN®	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	3.6A (Tc)	8V	560mOhm @ 3.4A, 8V	2.8V @ 500µA	9 nC @ 8 V	±18V	760 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (5x6)	3-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.