21A (Ta), 98A (Tc) Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 50A, 10V3.6mOhm @ 49A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3.4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 20 V2000 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta), 52W (Tc)3W (Ta), 63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8 FLPG-TDSON-8-6
Stocking Options
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Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC032N04LSATMA1
MOSFET N-CH 40V 21A/98A TDSON
Infineon Technologies
15 117
In Stock
1 : 1,16000 €
Cut Tape (CT)
5 000 : 0,45856 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Ta), 98A (Tc)
4.5V, 10V
3.2mOhm @ 50A, 10V
2V @ 250µA
25 nC @ 10 V
±20V
1800 pF @ 20 V
-
2.5W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
ISC015N04NM5
ISC036N04NM5ATMA1
40V 3.6M OPTIMOS MOSFET SUPERSO8
Infineon Technologies
4 358
In Stock
1 : 1,09000 €
Cut Tape (CT)
5 000 : 0,40713 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Ta), 98A (Tc)
7V, 10V
3.6mOhm @ 49A, 10V
3.4V @ 23µA
28 nC @ 10 V
±20V
2000 pF @ 20 V
-
3W (Ta), 63W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
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21A (Ta), 98A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.